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IXTH22N50P-VB Product details
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Product Introduction: IXTH22N50P-VB
IXTH22N50P-VB is a high-voltage N-channel MOSFET in TO247 package, designed for applications that require high voltage and high current handling. Its maximum drain-source voltage (VDS) is 500V, the drain current (ID) reaches 40A, and it has excellent on-resistance (RDS(ON)) performance, with an on-resistance of only 80mΩ when VGS is 10V. This MOSFET uses Super Junction (SJ) multi-epitaxial (Multi-EPI) technology to provide higher efficiency and lower losses in high-voltage applications, and is particularly suitable for use in industries such as industry and power conversion.
IXTH22N50P-VB is a high-voltage N-channel MOSFET in TO247 package, designed for applications that require high voltage and high current handling. Its maximum drain-source voltage (VDS) is 500V, the drain current (ID) reaches 40A, and it has excellent on-resistance (RDS(ON)) performance, with an on-resistance of only 80mΩ when VGS is 10V. This MOSFET uses Super Junction (SJ) multi-epitaxial (Multi-EPI) technology to provide higher efficiency and lower losses in high-voltage applications, and is particularly suitable for use in industries such as industry and power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH22N50P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Super Junction (SJ) multi-epitaxial (Multi-EPI)
- **Model**: IXTH22N50P-VB
- **Package**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 40A
- **Technology**: Super Junction (SJ) multi-epitaxial (Multi-EPI)
Domain and module applications：
Applications and module examples
1. **High-voltage power conversion**:
The IXTH22N50P-VB is commonly used in high-efficiency DC converters, inverters, and high-voltage DC power (HVDC) systems. Its 500V rated voltage makes it particularly suitable for use as a switching device in power transmission and distribution systems to achieve efficient energy conversion.
2. **Photovoltaic inverter**:
In solar photovoltaic systems, this MOSFET can be used as the main switching device of the inverter to handle the power conversion from DC to AC. Its high withstand voltage and low on-resistance ensure efficient energy transmission and reduce conversion losses.
3. **Industrial automation and motor drive**:
In industrial control systems, the IXTH22N50P-VB can be used for high-voltage motor drives and industrial automation control equipment, providing powerful load control capabilities, suitable for drive applications such as servo motors and brushless DC motors (BLDC).
4. **Uninterruptible Power Supply (UPS) and Power Conditioning Equipment**:
The device is also suitable for UPS systems and power conditioning equipment, acting as a key switching element in high-voltage protection circuits to ensure stable operation and power safety of the equipment.
Through these applications, IXTH22N50P-VB demonstrates its powerful processing capabilities and reliability in high-voltage power management and efficient conversion.
1. **High-voltage power conversion**:
The IXTH22N50P-VB is commonly used in high-efficiency DC converters, inverters, and high-voltage DC power (HVDC) systems. Its 500V rated voltage makes it particularly suitable for use as a switching device in power transmission and distribution systems to achieve efficient energy conversion.
2. **Photovoltaic inverter**:
In solar photovoltaic systems, this MOSFET can be used as the main switching device of the inverter to handle the power conversion from DC to AC. Its high withstand voltage and low on-resistance ensure efficient energy transmission and reduce conversion losses.
3. **Industrial automation and motor drive**:
In industrial control systems, the IXTH22N50P-VB can be used for high-voltage motor drives and industrial automation control equipment, providing powerful load control capabilities, suitable for drive applications such as servo motors and brushless DC motors (BLDC).
4. **Uninterruptible Power Supply (UPS) and Power Conditioning Equipment**:
The device is also suitable for UPS systems and power conditioning equipment, acting as a key switching element in high-voltage protection circuits to ensure stable operation and power safety of the equipment.
Through these applications, IXTH22N50P-VB demonstrates its powerful processing capabilities and reliability in high-voltage power management and efficient conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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