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IXTH21N50-VB Product details
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Product Introduction
**IXTH21N50-VB** is a high-performance N-channel MOSFET in TO247 package with 500V withstand voltage, suitable for high voltage applications. It is designed to provide low on-resistance (RDS(ON) is 80mΩ@VGS=10V) to ensure high efficiency under high current conditions. With a threshold voltage (Vth) of 3.8V, this MOSFET is suitable for a variety of power electronics applications and can operate stably at a gate-source voltage of 30V.
**IXTH21N50-VB** is a high-performance N-channel MOSFET in TO247 package with 500V withstand voltage, suitable for high voltage applications. It is designed to provide low on-resistance (RDS(ON) is 80mΩ@VGS=10V) to ensure high efficiency under high current conditions. With a threshold voltage (Vth) of 3.8V, this MOSFET is suitable for a variety of power electronics applications and can operate stably at a gate-source voltage of 30V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH21N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTH21N50-VB
- **Package**: TO247
- **Configuration**: Single N-channel
- **Withstand voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power converter**: IXTH21N50-VB is suitable for switch mode power supplies (SMPS) and DC-DC converters (DC-DC), which can effectively reduce switching losses and improve energy efficiency.
2. **Electric vehicles**: This MOSFET can be used in the drive system of electric vehicles, providing high voltage and high current conversion capabilities to ensure the efficiency and stability of the battery management system.
3. **Industrial automation**: In industrial equipment, it is used for motor control and drive, and can handle high voltage and high power requirements.
4. **Inverter**: Suitable for use in photovoltaic inverters and wind power inverters to improve the overall performance and stability of the system.
5. **Consumer electronics**: In high-power LED drivers and audio amplifiers, IXTH21N50-VB can achieve excellent switching performance and meet the needs of high efficiency.
Through these application examples, we can see that IXTH21N50-VB has a wide range of applicability in various high-voltage and high-power electronic devices.
1. **Power converter**: IXTH21N50-VB is suitable for switch mode power supplies (SMPS) and DC-DC converters (DC-DC), which can effectively reduce switching losses and improve energy efficiency.
2. **Electric vehicles**: This MOSFET can be used in the drive system of electric vehicles, providing high voltage and high current conversion capabilities to ensure the efficiency and stability of the battery management system.
3. **Industrial automation**: In industrial equipment, it is used for motor control and drive, and can handle high voltage and high power requirements.
4. **Inverter**: Suitable for use in photovoltaic inverters and wind power inverters to improve the overall performance and stability of the system.
5. **Consumer electronics**: In high-power LED drivers and audio amplifiers, IXTH21N50-VB can achieve excellent switching performance and meet the needs of high efficiency.
Through these application examples, we can see that IXTH21N50-VB has a wide range of applicability in various high-voltage and high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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