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IXTH20N50D-VB Product details
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Product Introduction
**IXTH20N50D-VB** is a high-voltage single N-channel MOSFET in a TO247 package, specifically designed to provide excellent performance in high-voltage and high-power applications. With its maximum drain-source voltage of 500V and low on-resistance of 80mΩ, the device exhibits extremely high efficiency and reliability in fields such as switching power supplies, motor drives, and industrial control. Using SJ_Multi-EPI technology, the IXTH20N50D-VB has good thermal performance and electrical characteristics, enabling it to work stably in harsh environments.
**IXTH20N50D-VB** is a high-voltage single N-channel MOSFET in a TO247 package, specifically designed to provide excellent performance in high-voltage and high-power applications. With its maximum drain-source voltage of 500V and low on-resistance of 80mΩ, the device exhibits extremely high efficiency and reliability in fields such as switching power supplies, motor drives, and industrial control. Using SJ_Multi-EPI technology, the IXTH20N50D-VB has good thermal performance and electrical characteristics, enabling it to work stably in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH20N50D-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTH20N50D-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Switching Power Supply**: The IXTH20N50D-VB can be used in efficient switching power supplies (SMPS). Its high voltage tolerance and low on-resistance can significantly improve energy conversion efficiency and reduce heat loss.
2. **Motor Drive**: In motor control and drive applications, this MOSFET can handle high voltage and high current, suitable for inverter and servo motor drive systems, ensuring smooth and efficient operation.
3. **Industrial Equipment**: In various industrial control systems, such as automation equipment and robotics, this device can be used as a switching element to support efficient load management and control.
4. **Renewable Energy**: In solar inverters and wind power generation systems, the IXTH20N50D-VB can effectively handle the conversion of power from battery packs to the grid, improving the overall efficiency and stability of the system.
5. **Power Electronics**: In power electronic devices such as high voltage DC (HVDC) and energy storage systems, the high voltage performance of this MOSFET makes it an ideal choice to support efficient energy management and regulation.
With its superior performance and diverse application potential, the IXTH20N50D-VB is an ideal solution for all types of demanding electrical systems.
1. **Switching Power Supply**: The IXTH20N50D-VB can be used in efficient switching power supplies (SMPS). Its high voltage tolerance and low on-resistance can significantly improve energy conversion efficiency and reduce heat loss.
2. **Motor Drive**: In motor control and drive applications, this MOSFET can handle high voltage and high current, suitable for inverter and servo motor drive systems, ensuring smooth and efficient operation.
3. **Industrial Equipment**: In various industrial control systems, such as automation equipment and robotics, this device can be used as a switching element to support efficient load management and control.
4. **Renewable Energy**: In solar inverters and wind power generation systems, the IXTH20N50D-VB can effectively handle the conversion of power from battery packs to the grid, improving the overall efficiency and stability of the system.
5. **Power Electronics**: In power electronic devices such as high voltage DC (HVDC) and energy storage systems, the high voltage performance of this MOSFET makes it an ideal choice to support efficient energy management and regulation.
With its superior performance and diverse application potential, the IXTH20N50D-VB is an ideal solution for all types of demanding electrical systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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