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IXTH200N10T-VB Product details
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Product Introduction
**IXTH200N10T-VB** is a high-performance single N-channel MOSFET in TO247 package with excellent current carrying capacity and low on-resistance, suitable for high-efficiency switching applications. The device is designed based on advanced Trench technology to provide excellent thermal and electrical performance, especially under high power and high frequency operating conditions.
**IXTH200N10T-VB** is a high-performance single N-channel MOSFET in TO247 package with excellent current carrying capacity and low on-resistance, suitable for high-efficiency switching applications. The device is designed based on advanced Trench technology to provide excellent thermal and electrical performance, especially under high power and high frequency operating conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH200N10T-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 320A
- **Technology**: Trench
- **Model**: IXTH200N10T-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 320A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The IXTH200N10T-VB is suitable for high-efficiency power converters such as DC-DC converters, which can provide stable current output under high load conditions.
2. **Electric Vehicle**: In the power system of electric vehicles, this MOSFET can be used in motor drive and charging systems, because its low on-resistance can significantly improve the energy conversion efficiency.
3. **Industrial Control**: This product can be widely used in industrial automation equipment, including servo motor drive and industrial control systems, to help achieve fast switching and high-efficiency control.
4. **Renewable Energy**: In solar inverters and wind power generation systems, the high-performance characteristics of the IXTH200N10T-VB make it suitable for inverter and maximum power point tracking (MPPT) circuits.
5. **Consumer Electronics**: In high-power LED drivers and audio amplifiers, this MOSFET can be used as a switching element to ensure that the equipment operates under efficient and reliable conditions.
With its excellent performance and wide applicability, this MOSFET is the ideal choice for a variety of demanding applications.
1. **Power Management**: The IXTH200N10T-VB is suitable for high-efficiency power converters such as DC-DC converters, which can provide stable current output under high load conditions.
2. **Electric Vehicle**: In the power system of electric vehicles, this MOSFET can be used in motor drive and charging systems, because its low on-resistance can significantly improve the energy conversion efficiency.
3. **Industrial Control**: This product can be widely used in industrial automation equipment, including servo motor drive and industrial control systems, to help achieve fast switching and high-efficiency control.
4. **Renewable Energy**: In solar inverters and wind power generation systems, the high-performance characteristics of the IXTH200N10T-VB make it suitable for inverter and maximum power point tracking (MPPT) circuits.
5. **Consumer Electronics**: In high-power LED drivers and audio amplifiers, this MOSFET can be used as a switching element to ensure that the equipment operates under efficient and reliable conditions.
With its excellent performance and wide applicability, this MOSFET is the ideal choice for a variety of demanding applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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