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IXTH180N10T-VB Product details
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**
IXTH180N10T-VB is a high-performance N-channel power MOSFET in a TO-247 package. The device has an extremely low on-resistance (RDS(ON)) of only 2mΩ, which can effectively reduce power consumption under higher current conditions. Its main features are a high rated current of 320A and a drain-source voltage (VDS) of 100V, which enables it to perform well in application scenarios requiring high efficiency and strong power handling. This MOSFET uses advanced trench technology to provide higher efficiency and reliability, and is an ideal choice for high current and low conduction loss requirements.
**2. IXTH180N10T-VB
IXTH180N10T-VB is a high-performance N-channel power MOSFET in a TO-247 package. The device has an extremely low on-resistance (RDS(ON)) of only 2mΩ, which can effectively reduce power consumption under higher current conditions. Its main features are a high rated current of 320A and a drain-source voltage (VDS) of 100V, which enables it to perform well in application scenarios requiring high efficiency and strong power handling. This MOSFET uses advanced trench technology to provide higher efficiency and reliability, and is an ideal choice for high current and low conduction loss requirements.
**2. IXTH180N10T-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
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- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS = 10V
- **Drain current (ID)**: 320A
- **Technology**: Trench MOSFET technology
- **Operating temperature range**: -55°C to +175°C
- **Power dissipation**: 750W typical
- **Gate charge (Qg)**: about 230nC @ VGS = 10V
The device features high current handling capability, low on-resistance and excellent thermal performance, making it an excellent performer in high-power applications.
- **Package type**: TO-247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS = 10V
- **Drain current (ID)**: 320A
- **Technology**: Trench MOSFET technology
- **Operating temperature range**: -55°C to +175°C
- **Power dissipation**: 750W typical
- **Gate charge (Qg)**: about 230nC @ VGS = 10V
The device features high current handling capability, low on-resistance and excellent thermal performance, making it an excellent performer in high-power applications.
Domain and module applications：
**
IXTH180N10T-VB is suitable for multiple high-power and high-efficiency fields, such as:
1. **Electric Vehicle (EV) Drive System**: In electric vehicles, this MOSFET can be used in the main inverter module to provide efficient DC-AC conversion, significantly reducing conduction losses when driving the motor and improving overall system efficiency.
2. **Industrial Power Module**: Due to its high current handling capability and low conduction losses, it is widely used in high-power switching power supplies (SMPS), especially in industrial power applications that require fast response and high efficiency.
3. **Renewable Energy Systems**: In renewable energy systems such as photovoltaic inverters and wind power converters, the IXTH180N10T-VB is able to handle high currents and provide lower losses in high power conversion applications.
4. **Server and Data Center Power Management**: Due to its low on-resistance and high efficiency characteristics, this device can be used in efficient power management systems for servers, especially in situations where high currents need to be handled.
5. **Motor Driver**: In motor control systems that require high efficiency and high current drive, the IXTH180N10T-VB can provide higher performance, especially in industrial automation, pump and fan control and other occasions.
IXTH180N10T-VB is suitable for multiple high-power and high-efficiency fields, such as:
1. **Electric Vehicle (EV) Drive System**: In electric vehicles, this MOSFET can be used in the main inverter module to provide efficient DC-AC conversion, significantly reducing conduction losses when driving the motor and improving overall system efficiency.
2. **Industrial Power Module**: Due to its high current handling capability and low conduction losses, it is widely used in high-power switching power supplies (SMPS), especially in industrial power applications that require fast response and high efficiency.
3. **Renewable Energy Systems**: In renewable energy systems such as photovoltaic inverters and wind power converters, the IXTH180N10T-VB is able to handle high currents and provide lower losses in high power conversion applications.
4. **Server and Data Center Power Management**: Due to its low on-resistance and high efficiency characteristics, this device can be used in efficient power management systems for servers, especially in situations where high currents need to be handled.
5. **Motor Driver**: In motor control systems that require high efficiency and high current drive, the IXTH180N10T-VB can provide higher performance, especially in industrial automation, pump and fan control and other occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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