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IXTH16N50P-VB Product details
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IXTH16N50P-VB Product Introduction
The IXTH16N50P-VB is a high-performance N-Channel MOSFET in a TO247 package suitable for high-voltage applications. With a maximum drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A, the device is suitable for power conversion and drive circuits. Its low on-resistance (RDS(ON)) of 80mΩ@VGS=10V enables high efficiency and low heat generation during switching operations. Using SJ_Multi-EPI technology, the device can operate stably under high temperature and high voltage conditions, and is widely used in various power management and industrial control systems.
The IXTH16N50P-VB is a high-performance N-Channel MOSFET in a TO247 package suitable for high-voltage applications. With a maximum drain-source voltage (VDS) of 500V and a maximum drain current (ID) of 40A, the device is suitable for power conversion and drive circuits. Its low on-resistance (RDS(ON)) of 80mΩ@VGS=10V enables high efficiency and low heat generation during switching operations. Using SJ_Multi-EPI technology, the device can operate stably under high temperature and high voltage conditions, and is widely used in various power management and industrial control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: IXTH16N50P-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Model**: IXTH16N50P-VB
- **Package**: TO247
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ (@VGS=10V)
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Applications and module examples
1. **Power supply**: IXTH16N50P-VB can be used in switch mode power supplies (SMPS) to improve energy efficiency and reliability. In high voltage applications, its superior on-resistance can effectively reduce energy loss.
2. **Motor drive**: In motor control modules, this MOSFET can be used as a driver to control the on and off of current to ensure that the motor operates with high efficiency and stability, especially suitable for high-power motor drive systems.
3. **Inverter**: In solar inverters and wind energy conversion systems, IXTH16N50P-VB can be used for efficient power conversion, helping to achieve efficient use of renewable energy and meet environmental protection needs.
4. **Power electronics**: In power electronic equipment (such as UPS, inverters, etc.), this device can provide efficient switching operations, ensure the overall performance and stability of the system, and meet industrial automation needs.
5. **Battery Management System**: In the battery management system (BMS), the IXTH16N50P-VB can be used in high-voltage and high-current applications to ensure battery safety and stability and extend battery life.
This device is suitable for a wide range of industrial and commercial applications due to its excellent performance and reliability, providing an ideal choice for design engineers.
1. **Power supply**: IXTH16N50P-VB can be used in switch mode power supplies (SMPS) to improve energy efficiency and reliability. In high voltage applications, its superior on-resistance can effectively reduce energy loss.
2. **Motor drive**: In motor control modules, this MOSFET can be used as a driver to control the on and off of current to ensure that the motor operates with high efficiency and stability, especially suitable for high-power motor drive systems.
3. **Inverter**: In solar inverters and wind energy conversion systems, IXTH16N50P-VB can be used for efficient power conversion, helping to achieve efficient use of renewable energy and meet environmental protection needs.
4. **Power electronics**: In power electronic equipment (such as UPS, inverters, etc.), this device can provide efficient switching operations, ensure the overall performance and stability of the system, and meet industrial automation needs.
5. **Battery Management System**: In the battery management system (BMS), the IXTH16N50P-VB can be used in high-voltage and high-current applications to ensure battery safety and stability and extend battery life.
This device is suitable for a wide range of industrial and commercial applications due to its excellent performance and reliability, providing an ideal choice for design engineers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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