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IXTH160N10T-VB Product details
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Product Introduction
IXTH160N10T-VB is a high-performance N-channel power MOSFET in TO247 package, designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, making it suitable for use in high-efficiency power supplies and power conversion. Its on-resistance (RDS(ON)) is only 6mΩ at VGS=10V, and its maximum drain current (ID) is 150A. IXTH160N10T-VB uses Trench technology, has extremely low conduction losses and excellent thermal management capabilities, and can meet the needs of high power density applications.
IXTH160N10T-VB is a high-performance N-channel power MOSFET in TO247 package, designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, making it suitable for use in high-efficiency power supplies and power conversion. Its on-resistance (RDS(ON)) is only 6mΩ at VGS=10V, and its maximum drain current (ID) is 150A. IXTH160N10T-VB uses Trench technology, has extremely low conduction losses and excellent thermal management capabilities, and can meet the needs of high power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 6mΩ @ VGS=10V
7. **Drain current (ID)**: 150A
8. **Technology type**: Trench technology
9. **Switching speed**: Supports fast switching, suitable for high-frequency applications
10. **Heat dissipation performance**: Good thermal management capabilities, suitable for high power density design
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 6mΩ @ VGS=10V
7. **Drain current (ID)**: 150A
8. **Technology type**: Trench technology
9. **Switching speed**: Supports fast switching, suitable for high-frequency applications
10. **Heat dissipation performance**: Good thermal management capabilities, suitable for high power density design
Domain and module applications：
Applications and modules
1. **Power management system**: IXTH160N10T-VB is very suitable for use in efficient power management systems, and can provide extremely low energy loss in power conversion. It is widely used in computer power supplies, communication equipment and various electronic products.
2. **Switching power supply (SMPS)**: Due to its excellent current handling capability and low on-resistance, this MOSFET is widely used in switching power supplies, which can effectively realize DC-DC conversion and improve energy efficiency.
3. **Photovoltaic inverter**: In solar photovoltaic inverters, IXTH160N10T-VB can efficiently convert the DC power generated by photovoltaic panels into AC power, adapt to different load conditions, and improve energy utilization efficiency.
4. **Motor drive control**: This device can quickly respond and control the operating status of the motor in the motor drive system. It is suitable for use in industrial automation, robotics and other fields to improve work efficiency and system reliability.
5. **Uninterruptible Power Supply (UPS)**: IXTH160N10T-VB provides stable power management in uninterruptible power supply systems to ensure the normal operation of key equipment in power outages, especially in data centers and medical equipment.
These applications demonstrate the wide applicability of IXTH160N10T-VB in high-efficiency power conversion, especially in situations requiring high current and low conduction loss.
1. **Power management system**: IXTH160N10T-VB is very suitable for use in efficient power management systems, and can provide extremely low energy loss in power conversion. It is widely used in computer power supplies, communication equipment and various electronic products.
2. **Switching power supply (SMPS)**: Due to its excellent current handling capability and low on-resistance, this MOSFET is widely used in switching power supplies, which can effectively realize DC-DC conversion and improve energy efficiency.
3. **Photovoltaic inverter**: In solar photovoltaic inverters, IXTH160N10T-VB can efficiently convert the DC power generated by photovoltaic panels into AC power, adapt to different load conditions, and improve energy utilization efficiency.
4. **Motor drive control**: This device can quickly respond and control the operating status of the motor in the motor drive system. It is suitable for use in industrial automation, robotics and other fields to improve work efficiency and system reliability.
5. **Uninterruptible Power Supply (UPS)**: IXTH160N10T-VB provides stable power management in uninterruptible power supply systems to ensure the normal operation of key equipment in power outages, especially in data centers and medical equipment.
These applications demonstrate the wide applicability of IXTH160N10T-VB in high-efficiency power conversion, especially in situations requiring high current and low conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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