IXTH15N50L2-VB Product details
Product introduction:
IXTH15N50L2-VB is a high-performance N-channel power MOSFET, using SJ_Multi-EPI technology, packaged in a TO247 housing. The device has a drain-source withstand voltage (VDS) of 500V and a maximum drain current (ID) of 40A, suitable for high-voltage and medium-current applications. Its on-resistance (RDS(ON)) is 80mΩ (at VGS = 10V), ensuring low losses during power conversion. The gate threshold voltage (Vth) of IXTH15N50L2-VB is 3.8V, providing good drive compatibility and is widely used in modern power electronics designs.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
1. **Package type**: TO247
2. **Configuration**: Single-N-Channel
3. **Drain-source withstand voltage (VDS)**: 500V
4. **Gate-source withstand voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
9. **Operating junction temperature range**: -55°C to +175°C
10. **Switching speed**: Suitable for high-frequency applications
Domain and module applications:
- **Switching Power Supply (SMPS)**: IXTH15N50L2-VB is widely used in switching power supplies and DC-DC converters for high voltage applications. Its low on-resistance characteristics help improve energy efficiency and reduce heat generation, thereby improving overall system performance.
- **Industrial Control**: This MOSFET is suitable for various industrial automation equipment, such as motor drive and control systems, and can provide stable power output under high load conditions to ensure the efficiency and reliability of the system.
- **Uninterruptible Power Supply (UPS)**: In UPS systems, IXTH15N50L2-VB can be used as an efficient switching element to manage the conversion and distribution of power to ensure continuous power supply to key equipment.
- **Battery Management System**: This device is suitable for battery charge and discharge management, capable of handling high currents, ensuring efficient charging and discharging of batteries, and providing stable working performance.
- **Renewable Energy System**: In solar inverters and wind power generation systems, IXTH15N50L2-VB can achieve efficient DC to AC conversion, improving the overall efficiency of photovoltaic and wind power generation.
In short, IXTH15N50L2-VB has become a key component in modern high-voltage power electronic systems with its excellent electrical performance and multiple application areas, able to meet the needs of different industries.
Technical support:
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