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IXTH152N085T-VB Product details
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Product Introduction:
IXTH152N085T-VB is a high-performance unipolar N-channel MOSFET in TO247 package, designed for high current and high-efficiency applications. Its rated drain-source voltage (VDS) is 80V, the maximum drain current can reach 215A, and it has extremely low on-resistance (2.8mΩ@VGS=10V and 4mΩ@VGS=4.5V). This MOSFET uses advanced Trench technology to achieve high efficiency at lower gate voltages, and is suitable for a variety of power management and conversion fields.
IXTH152N085T-VB is a high-performance unipolar N-channel MOSFET in TO247 package, designed for high current and high-efficiency applications. Its rated drain-source voltage (VDS) is 80V, the maximum drain current can reach 215A, and it has extremely low on-resistance (2.8mΩ@VGS=10V and 4mΩ@VGS=4.5V). This MOSFET uses advanced Trench technology to achieve high efficiency at lower gate voltages, and is suitable for a variety of power management and conversion fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Package type**: TO247
- **Channel configuration**: Single N channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2.8mΩ @ VGS=10V
- 4mΩ @ VGS=4.5V
- **Drain current (ID)**: 215A
- **Technology type**: Trench
- **Operating temperature range**: Typically -55°C to 175°C
- **Power consumption**: High power handling capability, suitable for high current applications
- **Breakdown voltage**: 80V
- **Drain current saturation region current**: 215A (continuous), providing excellent thermal management performance
- **Package type**: TO247
- **Channel configuration**: Single N channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2.8mΩ @ VGS=10V
- 4mΩ @ VGS=4.5V
- **Drain current (ID)**: 215A
- **Technology type**: Trench
- **Operating temperature range**: Typically -55°C to 175°C
- **Power consumption**: High power handling capability, suitable for high current applications
- **Breakdown voltage**: 80V
- **Drain current saturation region current**: 215A (continuous), providing excellent thermal management performance
Domain and module applications：
Applications and module examples:
1. **High-power power converters**: The IXTH152N085T-VB is ideal for DC-DC converters and AC-DC power modules, especially in high current and medium voltage applications, and is widely used in industrial power supplies and high-efficiency power management systems.
2. **Electric vehicle charging**: This MOSFET performs well in the charging infrastructure of electric vehicles, supporting high current transmission and fast charging to meet the high power requirements of electric vehicles during charging.
3. **Renewable energy applications**: In solar inverters and wind power generation systems, the IXTH152N085T-VB can achieve efficient power conversion, support high power output, and improve the efficiency and reliability of the overall system.
4. **Uninterruptible power supply (UPS)**: This device can be used in UPS systems to ensure stable power supply to critical loads during power outages and protect data and equipment security.
5. **Industrial Automation and Control**: IXTH152N085T-VB can also be used in high-power switches and control modules in industrial equipment and automation systems to provide reliable current support to meet rapidly changing load requirements.
With its excellent performance and reliability, IXTH152N085T-VB is an ideal choice for a variety of high-efficiency power management applications, which can significantly improve the energy efficiency and overall performance of the system.
1. **High-power power converters**: The IXTH152N085T-VB is ideal for DC-DC converters and AC-DC power modules, especially in high current and medium voltage applications, and is widely used in industrial power supplies and high-efficiency power management systems.
2. **Electric vehicle charging**: This MOSFET performs well in the charging infrastructure of electric vehicles, supporting high current transmission and fast charging to meet the high power requirements of electric vehicles during charging.
3. **Renewable energy applications**: In solar inverters and wind power generation systems, the IXTH152N085T-VB can achieve efficient power conversion, support high power output, and improve the efficiency and reliability of the overall system.
4. **Uninterruptible power supply (UPS)**: This device can be used in UPS systems to ensure stable power supply to critical loads during power outages and protect data and equipment security.
5. **Industrial Automation and Control**: IXTH152N085T-VB can also be used in high-power switches and control modules in industrial equipment and automation systems to provide reliable current support to meet rapidly changing load requirements.
With its excellent performance and reliability, IXTH152N085T-VB is an ideal choice for a variety of high-efficiency power management applications, which can significantly improve the energy efficiency and overall performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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