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IXTH13N80-VB Product details

Product introduction:

1. IXTH13N80-VB MOSFET Product Introduction
IXTH13N80-VB is a high-voltage single N-channel power MOSFET in TO247 package, designed to handle high voltage and high power applications. Its maximum drain-source voltage (VDS) can reach 800V, and the gate-source voltage (VGS) is ±30V, which is suitable for various high-voltage circuit environments. The device adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, which has high voltage resistance and stability. At VGS=10V, its on-resistance (RDS(ON)) is 500mΩ, and the maximum drain current can reach 11A. IXTH13N80-VB is very suitable for high-efficiency power management and switching power supply applications, which can significantly reduce power loss and improve system energy efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 800V 3.5V 11A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 800V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 800V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
II. IXTH13N80-VB Detailed Parameters
- **Package Type**: TO247
- **Channel Configuration**: Single N-channel
- **Maximum Drain-Source Voltage (VDS)**: 800V
- **Maximum Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 500mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 11A
- **Technology**: Superjunction (SJ) Multi-Epi
- **Operating Temperature Range**: -55°C to 150°C
- **Power Dissipation Capability**: High-Efficiency High-Voltage Switch Applications
- **Typical Applications**: High-Voltage Power Supplies, Inverters, Industrial Equipment

Domain and module applications:

3. Application fields and modules
IXTH13N80-VB MOSFET is widely used in many fields due to its excellent electrical performance, especially in the following modules and scenarios:

1. **High-voltage power converter**:
IXTH13N80-VB is suitable for various AC-DC and DC-DC power converters, and can efficiently convert power. It is suitable for industrial power supplies and high-voltage power adapters to reduce switching losses.

2. **Motor drive**:
In motor control applications, this MOSFET can efficiently manage high-voltage loads, improve the response speed and efficiency of motor drives, and is suitable for industrial automation and robotics.

3. **Renewable energy system**:
IXTH13N80-VB performs well in solar inverters and wind energy conversion systems, and can handle high-voltage power conversion to ensure the effective acquisition and utilization of power from renewable energy.

4. **Uninterruptible Power Supply (UPS)**:
In UPS systems, this MOSFET ensures stable power output when power fluctuates. It is an ideal choice for protecting the continuous power supply of key equipment and improving the reliability and stability of the system.

5. **High-voltage power equipment**:
IXTH13N80-VB is suitable for various high-voltage power equipment, such as power converters and power conditioners. It can meet the stringent high-voltage application requirements and ensure the safe and efficient operation of power equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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