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IXTH12N90-VB Product details
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IXTH12N90-VB Product Introduction
The IXTH12N90-VB is a high-voltage single N-channel MOSFET in a TO247 package, designed for high-voltage applications. It has a breakdown voltage (VDS) of 900V, a gate drive voltage range of ±30V (VGS), an on-resistance (RDS(ON)) of 750mΩ at VGS = 10V, and can carry a rated current of up to 9A. The device uses Super Junction multi-layer EPI technology to optimize switching performance and reduce conduction losses, making it ideal for a variety of high-efficiency power supplies and industrial applications.
The IXTH12N90-VB is a high-voltage single N-channel MOSFET in a TO247 package, designed for high-voltage applications. It has a breakdown voltage (VDS) of 900V, a gate drive voltage range of ±30V (VGS), an on-resistance (RDS(ON)) of 750mΩ at VGS = 10V, and can carry a rated current of up to 9A. The device uses Super Junction multi-layer EPI technology to optimize switching performance and reduce conduction losses, making it ideal for a variety of high-efficiency power supplies and industrial applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
| Parameter name| Value| Unit|
|------------------|--------------------|------|
| **Package type** | TO247 | - |
| **Channel type** | N-Channel | - |
| **Breakdown voltage (VDS)** | 900 | V |
| **Gate voltage (VGS)** | ±30 | V |
| **Threshold voltage (Vth)** | 3.5 | V |
| **On-resistance (RDS(ON))** | 750mΩ @ VGS=10V | mΩ |
| **Rated current (ID)** | 9 | A |
| **Technology** | SJ_Multi-EPI | - |
| Parameter name| Value| Unit|
|------------------|--------------------|------|
| **Package type** | TO247 | - |
| **Channel type** | N-Channel | - |
| **Breakdown voltage (VDS)** | 900 | V |
| **Gate voltage (VGS)** | ±30 | V |
| **Threshold voltage (Vth)** | 3.5 | V |
| **On-resistance (RDS(ON))** | 750mΩ @ VGS=10V | mΩ |
| **Rated current (ID)** | 9 | A |
| **Technology** | SJ_Multi-EPI | - |
Domain and module applications：
Application fields and module examples
1. **High-voltage power supply system**:
IXTH12N90-VB is very suitable for high-voltage power supply design, especially switching power supply. Its high breakdown voltage and relatively low conduction loss enable it to provide efficient power conversion in high-voltage applications and improve the overall system performance.
2. **Industrial equipment and motor control**:
This MOSFET can be widely used in motor control systems in industrial equipment. It can work stably at high voltage and handle high current loads. Its high efficiency can ensure the normal operation of the motor under high load conditions and improve the reliability of the system.
3. **Solar inverter**:
IXTH12N90-VB is ideal for use in solar inverters, capable of withstanding high voltages and providing stable output power. Its excellent switching performance can improve energy conversion efficiency and provide a reliable solution for photovoltaic applications.
4. **Welding Equipment and High-Frequency Converters**:
This MOSFET is also suitable for high-power applications such as welding equipment and high-frequency converters. Its high voltage withstand capability and good switching characteristics help achieve high efficiency and stability in these fields.
1. **High-voltage power supply system**:
IXTH12N90-VB is very suitable for high-voltage power supply design, especially switching power supply. Its high breakdown voltage and relatively low conduction loss enable it to provide efficient power conversion in high-voltage applications and improve the overall system performance.
2. **Industrial equipment and motor control**:
This MOSFET can be widely used in motor control systems in industrial equipment. It can work stably at high voltage and handle high current loads. Its high efficiency can ensure the normal operation of the motor under high load conditions and improve the reliability of the system.
3. **Solar inverter**:
IXTH12N90-VB is ideal for use in solar inverters, capable of withstanding high voltages and providing stable output power. Its excellent switching performance can improve energy conversion efficiency and provide a reliable solution for photovoltaic applications.
4. **Welding Equipment and High-Frequency Converters**:
This MOSFET is also suitable for high-power applications such as welding equipment and high-frequency converters. Its high voltage withstand capability and good switching characteristics help achieve high efficiency and stability in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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