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IXTH110N10L2-VB Product details
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Product Introduction
IXTH110N10L2-VB is a high-efficiency N-channel power MOSFET in TO247 package, designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, making it suitable for use in high-efficiency power supplies and power conversion. Its on-resistance (RDS(ON)) is 18mΩ at VGS=10V and its maximum drain current (ID) is 72A. IXTH110N10L2-VB uses Trench technology to provide excellent conduction performance and good thermal management characteristics, enabling it to perform well in high power density environments.
IXTH110N10L2-VB is a high-efficiency N-channel power MOSFET in TO247 package, designed for low voltage and high current applications. The device has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, making it suitable for use in high-efficiency power supplies and power conversion. Its on-resistance (RDS(ON)) is 18mΩ at VGS=10V and its maximum drain current (ID) is 72A. IXTH110N10L2-VB uses Trench technology to provide excellent conduction performance and good thermal management characteristics, enabling it to perform well in high power density environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 72A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
7. **Drain current (ID)**: 72A
8. **Technology type**: Trench technology
9. **Switching speed**: Supports fast switching, suitable for high-frequency applications
10. **Heat dissipation performance**: Good thermal management capability, suitable for high power density design
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**: 18mΩ @ VGS=10V
7. **Drain current (ID)**: 72A
8. **Technology type**: Trench technology
9. **Switching speed**: Supports fast switching, suitable for high-frequency applications
10. **Heat dissipation performance**: Good thermal management capability, suitable for high power density design
Domain and module applications：
Applications and modules
1. **Switching Power Supply (SMPS)**: IXTH110N10L2-VB performs well in switching power supplies and can efficiently handle power conversion. It is widely used in power modules for computer power supplies, communication equipment, and other electronic products.
2. **Power Converter**: Due to its high current handling capability and low conduction loss, this MOSFET is very suitable for power converters, which can effectively perform DC-DC conversion and meet the needs of industrial power supplies and power management systems.
3. **Photovoltaic Inverter**: In photovoltaic inverters, IXTH110N10L2-VB can be used to efficiently convert DC power generated by photovoltaic arrays into AC power, thereby improving energy utilization efficiency and adapting to various load conditions.
4. **Motor Drive Control**: The device can quickly respond and control the operating status of the motor. It is suitable for motor drive systems in industrial automation and robotics technology to improve work efficiency and system reliability.
5. **Uninterruptible Power Supply (UPS)**: IXTH110N10L2-VB is suitable for uninterruptible power supply systems, which can provide stable power management to ensure the normal operation of key equipment in power outages. It is widely used in data centers and medical equipment.
These applications demonstrate the wide applicability of IXTH110N10L2-VB in high-efficiency power conversion, especially in situations where low conduction loss and high reliability are required.
1. **Switching Power Supply (SMPS)**: IXTH110N10L2-VB performs well in switching power supplies and can efficiently handle power conversion. It is widely used in power modules for computer power supplies, communication equipment, and other electronic products.
2. **Power Converter**: Due to its high current handling capability and low conduction loss, this MOSFET is very suitable for power converters, which can effectively perform DC-DC conversion and meet the needs of industrial power supplies and power management systems.
3. **Photovoltaic Inverter**: In photovoltaic inverters, IXTH110N10L2-VB can be used to efficiently convert DC power generated by photovoltaic arrays into AC power, thereby improving energy utilization efficiency and adapting to various load conditions.
4. **Motor Drive Control**: The device can quickly respond and control the operating status of the motor. It is suitable for motor drive systems in industrial automation and robotics technology to improve work efficiency and system reliability.
5. **Uninterruptible Power Supply (UPS)**: IXTH110N10L2-VB is suitable for uninterruptible power supply systems, which can provide stable power management to ensure the normal operation of key equipment in power outages. It is widely used in data centers and medical equipment.
These applications demonstrate the wide applicability of IXTH110N10L2-VB in high-efficiency power conversion, especially in situations where low conduction loss and high reliability are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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