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IXTH102N20T-VB Product details

Product introduction:

1. Product Introduction:
IXTH102N20T-VB is a high-performance single N-channel power MOSFET in TO247 package with 200V drain-source voltage (VDS) and 96A maximum continuous drain current (ID). This MOSFET adopts trench technology to optimize its conduction performance and has low on-resistance (RDS(ON)=21mΩ@VGS=10V). IXTH102N20T-VB is designed for high-efficiency power management and power conversion applications, suitable for stable operation in high temperature and harsh environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 200V 4V 96A 21mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 200V 4V 96A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 200V 4V 96A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. Detailed parameter description:
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 4V
- **On-resistance (RDS(ON))**: 21mΩ @ VGS=10V
- **Continuous drain current (ID)**: 96A
- **Maximum pulsed drain current (ID, Pulse)**: Higher than 96A, depending on heat dissipation conditions
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: Supports high power operation under good heat dissipation conditions
- **Switching speed**: Suitable for medium and high frequency applications

Domain and module applications:

3. Application fields and module examples:
IXTH102N20T-VB is suitable for a variety of high-efficiency power management and power conversion applications. The following are some specific application fields:

- **High-efficiency switching power supply (SMPS)**: In switching power supplies and DC-DC converters, the low on-resistance and high current capability of IXTH102N20T-VB significantly improve energy conversion efficiency and reduce heat loss, making it suitable for high-power devices.

- **Electric vehicles and hybrid vehicles**: This MOSFET can be used in the drive control and charging systems of electric vehicles, providing efficient power conversion and control in motor drives and battery management systems to improve overall performance.

- **Renewable energy systems**: In solar inverters and wind power generation systems, IXTH102N20T-VB can efficiently handle power conversion, ensuring system stability and high power generation efficiency.

- **Industrial Automation and Motor Drive**: Suitable for industrial equipment and motor control systems, the IXTH102N20T-VB provides stable current regulation to support efficient operation under various load conditions.

- **High Voltage Power Module**: In medical equipment, communication equipment, and other applications requiring high voltage power supply, the IXTH102N20T-VB provides stable power output to ensure safe operation of equipment under harsh conditions.

With its excellent performance and reliability, the IXTH102N20T-VB is an ideal choice for high-performance power management and power control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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