Featured Model

Last updated:

IXKR40N60C-VB Product details

Product introduction:

1. IXKR40N60C-VB MOSFET Product Introduction
IXKR40N60C-VB is a high-performance single N-channel power MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage (VDS) is 650V, and it can withstand gate-source voltage (VGS) up to ±30V. The device adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology and has excellent conduction performance. At VGS=10V, the on-resistance (RDS(ON)) is 75mΩ, and the maximum drain current can reach 47A. IXKR40N60C-VB is very suitable for efficient power management, switching power supplies and industrial control systems, which can effectively reduce power loss and improve the overall energy efficiency of the system.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 47A 75mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. IXKR40N60C-VB detailed parameter description
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: Superjunction (SJ) multi-epitaxial (Multi-EPI)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption capability**: High-efficiency high-voltage switch applications
- **Typical applications**: High-voltage power supplies, inverters, industrial equipment

Domain and module applications:

3. Application fields and modules
IXKR40N60C-VB MOSFET is widely used in many fields due to its excellent electrical performance, especially in the following modules and scenarios:

1. **High-voltage power converter**:
IXKR40N60C-VB is suitable for various AC-DC and DC-DC power converters, which can achieve efficient power conversion and reduce switching losses. It is suitable for applications such as industrial power supplies and power adapters.

2. **Electric vehicles and charging infrastructure**:
This MOSFET performs well in inverters and fast charging piles for electric vehicles. It can handle high voltage and high current, provide stable power output, and improve charging efficiency and power performance.

3. **Renewable energy systems**:
IXKR40N60C-VB is very suitable for use in solar and wind inverters. It effectively manages high-voltage power conversion and ensures efficient use of energy. It is an important part of green energy solutions.

4. **Industrial Automation Equipment**:
In the field of industrial control and automation, IXKR40N60C-VB can be used for motor drive and high-voltage load management, improving the response speed and operating efficiency of equipment, and is widely used in industrial production lines and robotics.

5. **Uninterruptible Power Supply (UPS) System**:
In the UPS system, this MOSFET can ensure stable power output when power fluctuates. It is an ideal choice for protecting the continuous power supply of key equipment and ensuring high reliability and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat