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IXKR25N80C-VB Product details
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1. IXKR25N80C-VB Product Introduction
IXKR25N80C-VB is a high-performance single N-channel power MOSFET in TO247 package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of up to 800V, suitable for high voltage environments. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 90mΩ when the gate voltage is 10V, supporting a maximum drain current (ID) of 47A. The IXKR25N80C-VB uses advanced super junction (SJ) multi-layer epitaxial technology to ensure high efficiency and stability under high load and high temperature conditions, which is very suitable for power conversion and motor drive applications.
IXKR25N80C-VB is a high-performance single N-channel power MOSFET in TO247 package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of up to 800V, suitable for high voltage environments. Its threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 90mΩ when the gate voltage is 10V, supporting a maximum drain current (ID) of 47A. The IXKR25N80C-VB uses advanced super junction (SJ) multi-layer epitaxial technology to ensure high efficiency and stability under high load and high temperature conditions, which is very suitable for power conversion and motor drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | 90mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXKR25N80C-VB Parameter Description
- **Package Type**: TO247
- **Type**: Single N-channel
- **Drain-Source Voltage (VDS)**: 800V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 90mΩ @ VGS = 10V
- **Drain Current (ID)**: 47A
- **Technology**: Super Junction (SJ) Multi-EPI (Multi-EPI) Technology
- **Package Type**: TO247
- **Type**: Single N-channel
- **Drain-Source Voltage (VDS)**: 800V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 90mΩ @ VGS = 10V
- **Drain Current (ID)**: 47A
- **Technology**: Super Junction (SJ) Multi-EPI (Multi-EPI) Technology
Domain and module applications：
3. Application fields and module examples
1. **High-voltage switching power supply**: IXKR25N80C-VB is very suitable for high-voltage switching power supply (Switching Power Supply) and DC-DC converter (DC-DC Converter). Its high voltage withstand capability of 800V and low on-resistance characteristics enable it to effectively reduce power consumption and improve power conversion efficiency, and is widely used in industrial and commercial power systems.
2. **Motor drive system**: In the motor controller, this MOSFET can provide up to 47A of current support to ensure stable operation under high load conditions. Its high voltage withstand characteristics make it an ideal choice for motor drive applications, suitable for power tools and industrial equipment.
3. **Photovoltaic inverter**: IXKR25N80C-VB can be used for inverters in photovoltaic power generation systems to convert DC power into AC power. Its high efficiency and reliability ensure stable operation under different weather conditions and improve the overall power generation efficiency of photovoltaic systems.
4. **Uninterruptible Power Supply (UPS)**: This MOSFET can also be used in UPS systems to convert and stabilize power, ensuring fast and seamless switching when power is interrupted, and protecting the safe operation of key equipment.
In summary, the IXKR25N80C-VB is a MOSFET designed for high-voltage and high-efficiency applications. It is widely used in power management, motor drive, photovoltaic power generation, and UPS systems to meet a variety of high-performance power needs.
1. **High-voltage switching power supply**: IXKR25N80C-VB is very suitable for high-voltage switching power supply (Switching Power Supply) and DC-DC converter (DC-DC Converter). Its high voltage withstand capability of 800V and low on-resistance characteristics enable it to effectively reduce power consumption and improve power conversion efficiency, and is widely used in industrial and commercial power systems.
2. **Motor drive system**: In the motor controller, this MOSFET can provide up to 47A of current support to ensure stable operation under high load conditions. Its high voltage withstand characteristics make it an ideal choice for motor drive applications, suitable for power tools and industrial equipment.
3. **Photovoltaic inverter**: IXKR25N80C-VB can be used for inverters in photovoltaic power generation systems to convert DC power into AC power. Its high efficiency and reliability ensure stable operation under different weather conditions and improve the overall power generation efficiency of photovoltaic systems.
4. **Uninterruptible Power Supply (UPS)**: This MOSFET can also be used in UPS systems to convert and stabilize power, ensuring fast and seamless switching when power is interrupted, and protecting the safe operation of key equipment.
In summary, the IXKR25N80C-VB is a MOSFET designed for high-voltage and high-efficiency applications. It is widely used in power management, motor drive, photovoltaic power generation, and UPS systems to meet a variety of high-performance power needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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