IXKP24N60C5M-VB Product details
Product introduction:
IXKP24N60C5M-VB is a high-voltage N-channel MOSFET packaged in TO220F, designed for medium and high power applications. Its 650V drain-source breakdown voltage (VDS) and 20A continuous drain current (ID) enable it to excel in the high voltage field. This MOSFET adopts advanced SJ (super junction) and multi-layer EPI technology, with an on-resistance (RDS(ON)) of 160mΩ @VGS=10V, providing lower power loss and higher efficiency. The device is widely used in high-efficiency power management and conversion equipment, especially in application scenarios requiring high-voltage switching capabilities.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Continuous drain current (ID)**: 20A
- **Pulsed drain current**: Up to 80A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
- **Package characteristics**: TO220F package with full plastic insulation, suitable for application scenarios requiring electrical isolation.
Domain and module applications:
1. **Photovoltaic inverter**: The IXKP24N60C5M-VB performs well in the inverter of photovoltaic systems. Its 650V withstand voltage and 20A current capability enable it to perform efficient power conversion in high-voltage environments, ensuring efficient operation of solar energy systems, reducing losses, and improving system energy conversion rates.
2. **Power management**: This MOSFET is widely used in various switch mode power supplies (SMPS), such as server power supplies and industrial power supplies. Its super junction structure is capable of handling large currents and high voltages, providing low-loss, high-efficiency power conversion solutions, and effectively improving the power density of the system.
3. **Motor drive**: In the field of motor control, such as air conditioning and elevator drive systems, this MOSFET is suitable for high-voltage motor drive modules. Due to its efficient switching characteristics and low on-resistance, the device can effectively reduce power losses, thereby improving system efficiency and reducing heat.
4. **Industrial Automation Equipment**: IXKP24N60C5M-VB is widely used in industrial automation, especially in high-voltage and high-current industrial control modules. It can cope with harsh working conditions, provide efficient and stable power control, and improve the reliability of equipment.
With its excellent high-voltage and high-efficiency characteristics, IXKP24N60C5M-VB is suitable for multiple power conversion and control systems, providing reliable and low-loss solutions for these applications.
Technical support:
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