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IXKP13N60C5M-VB Product details

Product introduction:

1. Product Introduction:
IXKP13N60C5M-VB is a single N-channel power MOSFET in TO220F package with a rated drain-source voltage (VDS) of 650V and a maximum continuous drain current (ID) of 20A. The device adopts planar technology and has a high breakdown voltage and moderate on-resistance (RDS(ON)=320mΩ@VGS=10V). IXKP13N60C5M-VB is designed for high-voltage switching applications and can operate stably under high voltage and high power conditions. It is suitable for various power conversion and industrial application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 320mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. Detailed parameter description:
- **Package type**: TO220F
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 320mΩ @ VGS=10V
- **Continuous drain current (ID)**: 20A
- **Maximum pulse drain current (ID, Pulse)**: Higher than 20A, depending on heat dissipation conditions
- **Technology**: Plannar technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: Supports high power operation under good heat dissipation conditions
- **Switching speed**: Moderate, suitable for medium frequency applications
- **Thermal resistance (junction to case)**: Excellent thermal management characteristics, suitable for medium to high power applications

Domain and module applications:

3. Application fields and module examples:
IXKP13N60C5M-VB has high voltage resistance and stable current carrying capacity, so it is widely used in many fields:

- **Lighting equipment (such as LED drivers)**: This MOSFET can be used in high-voltage LED driver circuits to provide efficient power conversion, ensure stable brightness and reliability, especially in commercial or industrial lighting equipment that requires long-term operation.

- **Switching power supply (SMPS)**: In high-voltage switching power supplies, IXKP13N60C5M-VB can provide efficient energy conversion while controlling heat generation, suitable for industrial power systems and power management in data centers.

- **Industrial motor control**: Used in the switching part of high-voltage motor drivers, the high voltage resistance characteristics of MOSFET ensure that it can operate for a long time in harsh industrial environments, suitable for automation control systems and motor drive modules.

- **Renewable Energy Equipment**: In solar power generation and wind power inverters, the IXKP13N60C5M-VB can ensure efficient and stable operation in high-voltage power conversion, improving the reliability of power generation systems.

- **Power Transmission and Conversion Equipment**: This device can be used in high-voltage transmission systems and power conversion equipment to help achieve efficient power regulation and transmission, and is suitable for modular systems that require high voltage processing.

The planar technology and high voltage carrying capability of the IXKP13N60C5M-VB make it ideal for high-power, high-voltage applications that require reliable power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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