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IXKH47N60C-VB Product details

Product introduction:

IXKH47N60C-VB MOSFET Product Introduction:
IXKH47N60C-VB is a high-performance N-channel power MOSFET that uses advanced SJ_Multi-EPI technology and is packaged in a TO247 housing. With a drain-source withstand voltage (VDS) of 650V and a maximum drain current (ID) of 47A, the device has excellent performance in high-voltage and high-current applications. Its on-resistance (RDS(ON)) is 75mΩ (at VGS = 10V), ensuring low losses in switching and power conversion operations. This MOSFET is designed for high-efficiency, high-reliability power electronic systems. It can operate stably over a wide temperature range and is suitable for industrial, power electronics and new energy fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 47A 75mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description:
1. **Package type**: TO247
2. **Configuration**: Single-N-Channel
3. **Drain-source withstand voltage (VDS)**: 650V
4. **Gate-source withstand voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
7. **Drain current (ID)**: 47A
8. **Technology type**: SJ_Multi-EPI
9. **Operating junction temperature range**: -55°C to +175°C
10. **Switching speed**: Suitable for high-frequency power conversion applications

Domain and module applications:

Applicable fields and application modules:
- **Switching power supply (SMPS)**: IXKH47N60C-VB is very suitable for high-voltage applications such as switching power supplies and DC-DC converters. Its high drain-source withstand voltage and low on-resistance can effectively improve power conversion efficiency and reduce switching losses.
- **Industrial automation**: This MOSFET has excellent performance in motor control systems and is suitable for power transmission equipment that requires high efficiency and high reliability. It can provide large current drive capabilities and support high-speed operation.
- **Solar inverter**: In photovoltaic systems, IXKH47N60C-VB can be used for DC to AC power conversion. Its high voltage tolerance and low loss characteristics help improve the conversion efficiency of solar power generation.
- **Electric vehicle charging system**: The device performs well in electric vehicle charging stations and can withstand current transmission in high-voltage environments to ensure a fast and efficient charging process.
- **Uninterruptible Power Supply (UPS)**: In UPS systems, the IXKH47N60C-VB provides reliable high-voltage switching functions to help improve system stability and ensure continuous power supply to key equipment.

In general, the IXKH47N60C-VB is an efficient and reliable high-voltage MOSFET suitable for a variety of high-voltage power applications, especially in the fields of industrial control, energy conversion and power management, and can meet the needs of different power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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