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IXKH20N60C5-VB Product details

Product introduction:

1. IXKH20N60C5-VB Product Introduction:
IXKH20N60C5-VB is an N-channel MOSFET in TO247 package with a rated drain-source voltage of 650V, designed for high-voltage and high-power applications. The device is based on superjunction (SJ) multi-epitaxial layer (Multi-EPI) technology, providing low on-resistance and high energy efficiency. Its 160mΩ on-resistance (RDS(ON) @ VGS=10V) and 20A drain current enable it to provide stable performance and low energy consumption in high-voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. IXKH20N60C5-VB Detailed parameter description:
- **Package type**: TO247
- **Polarity**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multiple epitaxial layers (Multi-EPI)
- **Switching speed**: Efficient and fast switching, suitable for high-frequency applications
- **Power consumption**: Low switching loss, improve system efficiency
- **Operating temperature range**: Adapt to high temperature and high pressure working environment

Domain and module applications:

3. Application fields and module description:
1. **Power converters and inverters**:
The IXKH20N60C5-VB is ideal for high-voltage power converters and inverters, especially in uninterruptible power supplies (UPS) and photovoltaic inverters. The high voltage capability and low on-resistance of the device can effectively reduce energy loss and improve power conversion efficiency.

2. **Industrial drive and motor control**:
In the field of industrial automation, the IXKH20N60C5-VB is widely used in motor drive and control systems. It can handle higher voltages and currents, and has fast response capabilities to ensure efficient operation of motors, especially in applications that require high efficiency and precise control.

3. **Electric vehicles (EV) and charging stations**:
This MOSFET is ideal for use in power control systems and high-voltage fast charging equipment for electric vehicles. It can maintain stable operation under high power conditions, especially in charging and drive modules, and can support efficient energy conversion and fast charging.

4. **High-voltage lighting and power management**:
In high-power, high-voltage lighting systems (such as LED street lights or industrial lighting), the IXKH20N60C5-VB is an ideal choice. Its high voltage tolerance and low on-resistance can ensure the reliability and efficiency of the lighting system, reduce power consumption, and extend the life of the equipment.

5. **Energy storage and management**:
The device is also suitable for energy storage systems and battery management systems. Its efficient power conversion and low loss characteristics make it perform well in systems that require efficient energy storage and energy distribution, such as wind and solar energy storage modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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