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IXGH32N60A-VB Product details
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1. IXGH32N60A-VB MOSFET Product Introduction
IXGH32N60A-VB is a high-voltage single N-channel power MOSFET in TO247 package, designed for high-efficiency and high-power handling applications. Its drain-source voltage (VDS) is 650V and the gate-source voltage (VGS) is ±30V, which is suitable for handling high-voltage environments. This MOSFET adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, which gives it low conduction loss. At VGS=10V, its on-resistance (RDS(ON)) is 160mΩ and the maximum drain current is 20A. This device is suitable for high-efficiency power management and high-voltage switching applications, which can significantly reduce power losses and improve system energy efficiency.
IXGH32N60A-VB is a high-voltage single N-channel power MOSFET in TO247 package, designed for high-efficiency and high-power handling applications. Its drain-source voltage (VDS) is 650V and the gate-source voltage (VGS) is ±30V, which is suitable for handling high-voltage environments. This MOSFET adopts Super Junction (SJ) multi-epitaxial (Multi-EPI) technology, which gives it low conduction loss. At VGS=10V, its on-resistance (RDS(ON)) is 160mΩ and the maximum drain current is 20A. This device is suitable for high-efficiency power management and high-voltage switching applications, which can significantly reduce power losses and improve system energy efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXGH32N60A-VB Detailed Parameters
- **Package Type**: TO247
- **Channel Configuration**: Single N-channel
- **Maximum Drain-Source Voltage (VDS)**: 650V
- **Maximum Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 20A
- **Technology**: Superjunction (SJ) Multi-Epi
- **Operating Temperature Range**: -55°C to 150°C
- **Power Dissipation Capability**: High-Efficiency High-Voltage Switch Applications
- **Typical Applications**: High-Voltage Power Management, Inverters, Industrial Control Equipment
- **Package Type**: TO247
- **Channel Configuration**: Single N-channel
- **Maximum Drain-Source Voltage (VDS)**: 650V
- **Maximum Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**: 160mΩ @ VGS=10V
- **Maximum Drain Current (ID)**: 20A
- **Technology**: Superjunction (SJ) Multi-Epi
- **Operating Temperature Range**: -55°C to 150°C
- **Power Dissipation Capability**: High-Efficiency High-Voltage Switch Applications
- **Typical Applications**: High-Voltage Power Management, Inverters, Industrial Control Equipment
Domain and module applications：
3. Application fields and modules
IXGH32N60A-VB MOSFET is widely used in the following fields and modules due to its strong high-voltage handling capability and efficient switching performance:
1. **High-voltage power converter**:
IXGH32N60A-VB is suitable for AC-DC and DC-DC power converters, which can efficiently convert power, reduce switching losses and improve system stability. It is particularly suitable for power solutions in industrial and communication fields.
2. **Motor drive and industrial control**:
In motor drive applications, this MOSFET can be used for high-voltage drivers to improve the response speed and power output efficiency of industrial equipment by effectively managing high-power loads and providing precise control signals.
3. **Renewable energy systems**:
IXGH32N60A-VB also performs well in solar and wind inverters. Its high voltage withstand characteristics can handle high-voltage power conversion, ensuring efficient conversion and transmission of power from photovoltaic or wind power generation systems.
4. **Uninterruptible Power Supply (UPS)**:
In UPS systems, this MOSFET helps ensure fast switching and stable power supply when power fluctuates, making it an ideal choice for ensuring continuous power supply to critical equipment.
5. **Automotive Electronics and Charging Infrastructure**:
In the inverter and charging system of electric vehicles, the IXGH32N60A-VB can efficiently handle high-voltage power and provide stable power output for vehicles and charging piles.
IXGH32N60A-VB MOSFET is widely used in the following fields and modules due to its strong high-voltage handling capability and efficient switching performance:
1. **High-voltage power converter**:
IXGH32N60A-VB is suitable for AC-DC and DC-DC power converters, which can efficiently convert power, reduce switching losses and improve system stability. It is particularly suitable for power solutions in industrial and communication fields.
2. **Motor drive and industrial control**:
In motor drive applications, this MOSFET can be used for high-voltage drivers to improve the response speed and power output efficiency of industrial equipment by effectively managing high-power loads and providing precise control signals.
3. **Renewable energy systems**:
IXGH32N60A-VB also performs well in solar and wind inverters. Its high voltage withstand characteristics can handle high-voltage power conversion, ensuring efficient conversion and transmission of power from photovoltaic or wind power generation systems.
4. **Uninterruptible Power Supply (UPS)**:
In UPS systems, this MOSFET helps ensure fast switching and stable power supply when power fluctuates, making it an ideal choice for ensuring continuous power supply to critical equipment.
5. **Automotive Electronics and Charging Infrastructure**:
In the inverter and charging system of electric vehicles, the IXGH32N60A-VB can efficiently handle high-voltage power and provide stable power output for vehicles and charging piles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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