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IXGH20N50A-VB Product details
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1. IXGH20N50A-VB Product Introduction
The IXGH20N50A-VB is a high-voltage single N-channel power MOSFET in a TO247 package suitable for high-power applications. The device's drain-source voltage (VDS) can withstand voltages up to 500V, with excellent voltage resistance and low conduction losses. The threshold voltage (Vth) is 3.8V, the on-resistance (RDS(ON)) is 80mΩ at a gate voltage of 10V, and the maximum drain current (ID) is 40A. The IXGH20N50A-VB uses super junction (SJ) multi-layer epitaxial (Multi-EPI) technology with high efficiency and low heat generation, making it suitable for high-efficiency power conversion and switching applications.
The IXGH20N50A-VB is a high-voltage single N-channel power MOSFET in a TO247 package suitable for high-power applications. The device's drain-source voltage (VDS) can withstand voltages up to 500V, with excellent voltage resistance and low conduction losses. The threshold voltage (Vth) is 3.8V, the on-resistance (RDS(ON)) is 80mΩ at a gate voltage of 10V, and the maximum drain current (ID) is 40A. The IXGH20N50A-VB uses super junction (SJ) multi-layer epitaxial (Multi-EPI) technology with high efficiency and low heat generation, making it suitable for high-efficiency power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXGH20N50A-VB Parameter Description
- **Package Type**: TO247
- **Type**: Single N-channel
- **Drain-Source Voltage (VDS)**: 500V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.8V
- **On-Resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain Current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI (Multi-EPI) Technology
- **Package Type**: TO247
- **Type**: Single N-channel
- **Drain-Source Voltage (VDS)**: 500V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.8V
- **On-Resistance (RDS(ON))**: 80mΩ @ VGS = 10V
- **Drain Current (ID)**: 40A
- **Technology**: Super Junction (SJ) Multi-EPI (Multi-EPI) Technology
Domain and module applications：
III. Application fields and module examples
1. **Industrial power supply system**: IXGH20N50A-VB is suitable for industrial-grade high-voltage switching power supply (Switching Power Supply). Its high voltage withstand capability of 500V and low conduction loss enable it to withstand the high-voltage conversion requirements in industrial equipment and ensure the stability and reliability of the power supply system.
2. **Motor controller**: This MOSFET can be used for high-current drive in motor controllers, especially in high-voltage drive circuits, and can provide 40A current output to ensure efficient operation of motors in high-power applications.
3. **Photovoltaic inverter**: In photovoltaic power generation systems, IXGH20N50A-VB can undertake the task of converting DC power into AC power. Its high-efficiency design and high voltage withstand characteristics are very suitable for photovoltaic inverters to improve power generation efficiency.
4. **Uninterruptible power supply (UPS)**: This MOSFET can also be used in UPS systems to help handle power conversion and voltage stabilization, ensuring fast and seamless switching when power is interrupted, and protecting the operation of key equipment and systems.
Overall, the IXGH20N50A-VB is a high-voltage, high-efficiency MOSFET that is suitable for a variety of fields such as industrial power supplies, photovoltaic inverters, UPS systems, etc., meeting the needs of high voltage and high power applications.
1. **Industrial power supply system**: IXGH20N50A-VB is suitable for industrial-grade high-voltage switching power supply (Switching Power Supply). Its high voltage withstand capability of 500V and low conduction loss enable it to withstand the high-voltage conversion requirements in industrial equipment and ensure the stability and reliability of the power supply system.
2. **Motor controller**: This MOSFET can be used for high-current drive in motor controllers, especially in high-voltage drive circuits, and can provide 40A current output to ensure efficient operation of motors in high-power applications.
3. **Photovoltaic inverter**: In photovoltaic power generation systems, IXGH20N50A-VB can undertake the task of converting DC power into AC power. Its high-efficiency design and high voltage withstand characteristics are very suitable for photovoltaic inverters to improve power generation efficiency.
4. **Uninterruptible power supply (UPS)**: This MOSFET can also be used in UPS systems to help handle power conversion and voltage stabilization, ensuring fast and seamless switching when power is interrupted, and protecting the operation of key equipment and systems.
Overall, the IXGH20N50A-VB is a high-voltage, high-efficiency MOSFET that is suitable for a variety of fields such as industrial power supplies, photovoltaic inverters, UPS systems, etc., meeting the needs of high voltage and high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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