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IXFY5N50P3-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IXFY5N50P3-VB is a high-performance N-channel MOSFET in TO252 package, using advanced SJ (super junction) and multi-layer EPI technology. This MOSFET has a drain-source breakdown voltage (VDS) of 650V, making it suitable for high-voltage applications. The rated current is 5A and the on-resistance is 1000mΩ@VGS=10V, which can work effectively under a certain current load. The IXFY5N50P3-VB is designed to meet the high efficiency and reliability requirements of power conversion and switching circuits, and is an ideal choice for a variety of power management systems.
IXFY5N50P3-VB is a high-performance N-channel MOSFET in TO252 package, using advanced SJ (super junction) and multi-layer EPI technology. This MOSFET has a drain-source breakdown voltage (VDS) of 650V, making it suitable for high-voltage applications. The rated current is 5A and the on-resistance is 1000mΩ@VGS=10V, which can work effectively under a certain current load. The IXFY5N50P3-VB is designed to meet the high efficiency and reliability requirements of power conversion and switching circuits, and is an ideal choice for a variety of power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Continuous drain current (ID)**: 5A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1000mΩ @ VGS=10V
- **Continuous drain current (ID)**: 5A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples:
1. **Power adapter**: IXFY5N50P3-VB is ideal for small power adapters, especially in applications that require high voltage and low current. Its 650V withstand voltage ensures that the adapter works stably under a variety of input voltage conditions, suitable for laptop chargers and consumer electronics.
2. **LED driver**: In LED driver power, the performance of this MOSFET enables it to efficiently manage current and voltage to provide stable LED brightness. Its low on-resistance extends the life of the LED while reducing energy consumption.
3. **Motor drive**: Although the IXFY5N50P3-VB has a relatively low rated current, it can still be used in small motor drive applications such as fans and small pumps. These applications often require efficient switching characteristics to ensure stable operation of the motor under different load conditions.
4. **Switching Power Supply (SMPS)**: In the design of switching power supply, the high withstand voltage and relatively low on-resistance of this MOSFET make it suitable for a variety of power converters, capable of efficient power conversion, and widely used in power management of computers and communication equipment.
With its good performance and stability, IXFY5N50P3-VB has become an important part of efficient power supply solutions in many fields and can meet diverse application needs.
1. **Power adapter**: IXFY5N50P3-VB is ideal for small power adapters, especially in applications that require high voltage and low current. Its 650V withstand voltage ensures that the adapter works stably under a variety of input voltage conditions, suitable for laptop chargers and consumer electronics.
2. **LED driver**: In LED driver power, the performance of this MOSFET enables it to efficiently manage current and voltage to provide stable LED brightness. Its low on-resistance extends the life of the LED while reducing energy consumption.
3. **Motor drive**: Although the IXFY5N50P3-VB has a relatively low rated current, it can still be used in small motor drive applications such as fans and small pumps. These applications often require efficient switching characteristics to ensure stable operation of the motor under different load conditions.
4. **Switching Power Supply (SMPS)**: In the design of switching power supply, the high withstand voltage and relatively low on-resistance of this MOSFET make it suitable for a variety of power converters, capable of efficient power conversion, and widely used in power management of computers and communication equipment.
With its good performance and stability, IXFY5N50P3-VB has become an important part of efficient power supply solutions in many fields and can meet diverse application needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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