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IXFX80N60P3-VB Product details
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IXFX80N60P3-VB MOSFET Product Introduction:
IXFX80N60P3-VB is a high-voltage N-channel power MOSFET that uses advanced SJ_Multi-EPI technology and is packaged in a TO247 housing. The device has a drain-source withstand voltage (VDS) of 650V and a drain current (ID) of 47A, making it ideal for high-voltage and high-current applications. Its on-resistance (RDS(ON)) is 75mΩ (at VGS = 10V), ensuring low losses during power conversion. The MOSFET has a gate threshold voltage (Vth) of 3.5V and can operate stably under a variety of drive voltages, making it widely used in modern power electronics designs.
IXFX80N60P3-VB is a high-voltage N-channel power MOSFET that uses advanced SJ_Multi-EPI technology and is packaged in a TO247 housing. The device has a drain-source withstand voltage (VDS) of 650V and a drain current (ID) of 47A, making it ideal for high-voltage and high-current applications. Its on-resistance (RDS(ON)) is 75mΩ (at VGS = 10V), ensuring low losses during power conversion. The MOSFET has a gate threshold voltage (Vth) of 3.5V and can operate stably under a variety of drive voltages, making it widely used in modern power electronics designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
1. **Package type**: TO247
2. **Configuration**: Single-N-Channel
3. **Drain-source withstand voltage (VDS)**: 650V
4. **Gate-source withstand voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
7. **Drain current (ID)**: 47A
8. **Technology type**: SJ_Multi-EPI
9. **Operating junction temperature range**: -55°C to +175°C
10. **Switching speed**: Suitable for high-frequency applications
1. **Package type**: TO247
2. **Configuration**: Single-N-Channel
3. **Drain-source withstand voltage (VDS)**: 650V
4. **Gate-source withstand voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
7. **Drain current (ID)**: 47A
8. **Technology type**: SJ_Multi-EPI
9. **Operating junction temperature range**: -55°C to +175°C
10. **Switching speed**: Suitable for high-frequency applications
Domain and module applications：
Applicable fields and application modules:
- **Switching Power Supply (SMPS)**: IXFX80N60P3-VB is widely used in switching power supplies and DC-DC converters, suitable for high power conversion occasions. Its high voltage and low on-resistance characteristics can significantly improve power efficiency and reduce energy loss.
- **Industrial Automation**: This MOSFET is suitable for motor drive and control systems, providing stable power output, ensuring efficient operation and fast response capabilities of the system, and is suitable for various automation equipment.
- **Uninterruptible Power Supply (UPS)**: In UPS systems, IXFX80N60P3-VB, as a switching element, can effectively manage high current and high voltage energy, improving system reliability and safety.
- **Electric Vehicle (EV)**: This device is suitable for power management and charging modules of electric vehicles, capable of handling high voltage, improving charging efficiency, and supporting the needs of fast charging.
- **Solar Inverter**: IXFX80N60P3-VB can be used for inverters in solar power generation systems to ensure efficient DC to AC conversion and improve the overall performance of photovoltaic systems.
In short, IXFX80N60P3-VB has become an important component of modern high-voltage power electronic systems with its excellent electrical performance and wide application fields, and can effectively meet the needs of various high-power applications.
- **Switching Power Supply (SMPS)**: IXFX80N60P3-VB is widely used in switching power supplies and DC-DC converters, suitable for high power conversion occasions. Its high voltage and low on-resistance characteristics can significantly improve power efficiency and reduce energy loss.
- **Industrial Automation**: This MOSFET is suitable for motor drive and control systems, providing stable power output, ensuring efficient operation and fast response capabilities of the system, and is suitable for various automation equipment.
- **Uninterruptible Power Supply (UPS)**: In UPS systems, IXFX80N60P3-VB, as a switching element, can effectively manage high current and high voltage energy, improving system reliability and safety.
- **Electric Vehicle (EV)**: This device is suitable for power management and charging modules of electric vehicles, capable of handling high voltage, improving charging efficiency, and supporting the needs of fast charging.
- **Solar Inverter**: IXFX80N60P3-VB can be used for inverters in solar power generation systems to ensure efficient DC to AC conversion and improve the overall performance of photovoltaic systems.
In short, IXFX80N60P3-VB has become an important component of modern high-voltage power electronic systems with its excellent electrical performance and wide application fields, and can effectively meet the needs of various high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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