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IXFX80N50P-VB Product details
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IXFX80N50P-VB MOSFET Product Introduction
The IXFX80N50P-VB is a high-performance N-channel MOSFET in a TO247 package, designed for high-voltage applications and capable of withstanding drain-source voltages up to 500V. The device has a gate voltage of ±30V, a threshold voltage of 3.5V, and a maximum drain current of 47A. At a gate drive of 10V, its on-resistance is 50mΩ. The IXFX80N50P-VB uses superjunction multi-epitaxial (SJ_Multi-EPI) technology, which provides excellent switching performance and low energy consumption, making it suitable for use in high-voltage and high-current applications.
The IXFX80N50P-VB is a high-performance N-channel MOSFET in a TO247 package, designed for high-voltage applications and capable of withstanding drain-source voltages up to 500V. The device has a gate voltage of ±30V, a threshold voltage of 3.5V, and a maximum drain current of 47A. At a gate drive of 10V, its on-resistance is 50mΩ. The IXFX80N50P-VB uses superjunction multi-epitaxial (SJ_Multi-EPI) technology, which provides excellent switching performance and low energy consumption, making it suitable for use in high-voltage and high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.5V | 47A | 50mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IXFX80N50P-VB MOSFET detailed parameter description
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 500V
- **VGS** (gate drive voltage): ±30V
- **Vth** (threshold voltage): 3.5V
- **RDS(ON)** (on-resistance): 50mΩ @ VGS=10V
- **ID** (drain current): 47A
- **Technology**: Superjunction (SJ) Multi-EPI
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 500V
- **VGS** (gate drive voltage): ±30V
- **Vth** (threshold voltage): 3.5V
- **RDS(ON)** (on-resistance): 50mΩ @ VGS=10V
- **ID** (drain current): 47A
- **Technology**: Superjunction (SJ) Multi-EPI
Domain and module applications：
Applications and modules
1. **Switching Power Supply (SMPS)**: The IXFX80N50P-VB is widely used in high-efficiency switching power supply designs, especially for power modules that require 500V voltage, and can provide excellent efficiency and stability, especially in the power supply of computers and communication equipment.
2. **Electric Vehicle Charger**: The high withstand voltage characteristics of this MOSFET make it very suitable for electric vehicle charging systems, which can effectively manage high currents, improve charging efficiency, and ensure the safety of the charging process.
3. **Renewable Energy System**: In photovoltaic inverters and wind power generation systems, the high power handling capability of the IXFX80N50P-VB makes it an ideal choice for high-efficiency power management, and can operate stably in various environments.
4. **Motor Drive**: In motor control and drive applications, the device can effectively handle high currents and high voltages, and is suitable for industrial automation and robotic systems to improve drive efficiency and precision.
5. **Uninterruptible Power Supply (UPS)**: IXFX80N50P-VB also plays an important role in the UPS system, providing reliable power support for high-power loads and ensuring continuous operation during power outages or power fluctuations.
1. **Switching Power Supply (SMPS)**: The IXFX80N50P-VB is widely used in high-efficiency switching power supply designs, especially for power modules that require 500V voltage, and can provide excellent efficiency and stability, especially in the power supply of computers and communication equipment.
2. **Electric Vehicle Charger**: The high withstand voltage characteristics of this MOSFET make it very suitable for electric vehicle charging systems, which can effectively manage high currents, improve charging efficiency, and ensure the safety of the charging process.
3. **Renewable Energy System**: In photovoltaic inverters and wind power generation systems, the high power handling capability of the IXFX80N50P-VB makes it an ideal choice for high-efficiency power management, and can operate stably in various environments.
4. **Motor Drive**: In motor control and drive applications, the device can effectively handle high currents and high voltages, and is suitable for industrial automation and robotic systems to improve drive efficiency and precision.
5. **Uninterruptible Power Supply (UPS)**: IXFX80N50P-VB also plays an important role in the UPS system, providing reliable power support for high-power loads and ensuring continuous operation during power outages or power fluctuations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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