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IXFX74N50P2-VB Product details
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1. IXFX74N50P2-VB MOSFET Product Introduction
IXFX74N50P2-VB is a high-performance single N-channel power MOSFET packaged in TO247 with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. The device uses advanced Super Junction (SJ) multi-epitaxial (Multi-EPI) technology to ensure low on-resistance and high power handling capability. At VGS=10V, the on-resistance (RDS(ON)) is 75mΩ and the maximum drain current can reach 47A. This makes the IXFX74N50P2-VB very suitable for efficient power management and switching applications, which can effectively improve the energy efficiency of the system and reduce heat generation.
IXFX74N50P2-VB is a high-performance single N-channel power MOSFET packaged in TO247 with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. The device uses advanced Super Junction (SJ) multi-epitaxial (Multi-EPI) technology to ensure low on-resistance and high power handling capability. At VGS=10V, the on-resistance (RDS(ON)) is 75mΩ and the maximum drain current can reach 47A. This makes the IXFX74N50P2-VB very suitable for efficient power management and switching applications, which can effectively improve the energy efficiency of the system and reduce heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFX74N50P2-VB detailed parameter description
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
- **Power consumption capability**: High-efficiency switching applications
- **Operating frequency**: Suitable for medium and high frequency switching circuits
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
- **Power consumption capability**: High-efficiency switching applications
- **Operating frequency**: Suitable for medium and high frequency switching circuits
Domain and module applications：
3. Application fields and modules
IXFX74N50P2-VB MOSFET is widely used in many fields due to its superior electrical performance, especially in the following modules and scenarios:
1. **High-voltage power converter**:
This MOSFET is suitable for AC-DC and DC-DC power converters, especially in industrial power supplies and power adapters, which can efficiently realize power conversion and reduce switching losses, improving overall system efficiency.
2. **Electric vehicle charging infrastructure**:
IXFX74N50P2-VB is very suitable for inverters and charging piles for electric vehicles, which can handle high voltage and high current, provide reliable power output, and improve charging efficiency.
3. **Renewable energy system**:
In solar inverters, IXFX74N50P2-VB can effectively manage the high voltage output from photovoltaic panels, ensure the high efficiency of energy conversion, and is suitable for green energy solutions.
4. **Industrial Automation Equipment**:
This MOSFET can be used in motor drive and control systems, supports high-voltage load management, optimizes the response speed and operating efficiency of equipment, and is widely used in industrial control systems.
5. **Uninterruptible Power Supply (UPS) System**:
IXFX74N50P2-VB can effectively manage power conversion in UPS systems, ensure stable power output when power fluctuates, and improve system reliability and performance.
IXFX74N50P2-VB MOSFET is widely used in many fields due to its superior electrical performance, especially in the following modules and scenarios:
1. **High-voltage power converter**:
This MOSFET is suitable for AC-DC and DC-DC power converters, especially in industrial power supplies and power adapters, which can efficiently realize power conversion and reduce switching losses, improving overall system efficiency.
2. **Electric vehicle charging infrastructure**:
IXFX74N50P2-VB is very suitable for inverters and charging piles for electric vehicles, which can handle high voltage and high current, provide reliable power output, and improve charging efficiency.
3. **Renewable energy system**:
In solar inverters, IXFX74N50P2-VB can effectively manage the high voltage output from photovoltaic panels, ensure the high efficiency of energy conversion, and is suitable for green energy solutions.
4. **Industrial Automation Equipment**:
This MOSFET can be used in motor drive and control systems, supports high-voltage load management, optimizes the response speed and operating efficiency of equipment, and is widely used in industrial control systems.
5. **Uninterruptible Power Supply (UPS) System**:
IXFX74N50P2-VB can effectively manage power conversion in UPS systems, ensure stable power output when power fluctuates, and improve system reliability and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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