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IXFX66N50Q2-VB Product details
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1. IXFX66N50Q2-VB Product Introduction
IXFX66N50Q2-VB is a high-performance single N-channel power MOSFET in TO247 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) can withstand up to 650V, suitable for harsh voltage conditions. The device has a threshold voltage (Vth) of 3.5V, and its on-resistance (RDS(ON)) is only 75mΩ when the gate voltage is 10V, supporting a maximum drain current (ID) of 47A. IXFX66N50Q2-VB uses advanced super junction (SJ) multi-layer epitaxial technology to ensure its stability and high efficiency under high load and high temperature environments, and is widely used in power conversion and drive circuits.
IXFX66N50Q2-VB is a high-performance single N-channel power MOSFET in TO247 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) can withstand up to 650V, suitable for harsh voltage conditions. The device has a threshold voltage (Vth) of 3.5V, and its on-resistance (RDS(ON)) is only 75mΩ when the gate voltage is 10V, supporting a maximum drain current (ID) of 47A. IXFX66N50Q2-VB uses advanced super junction (SJ) multi-layer epitaxial technology to ensure its stability and high efficiency under high load and high temperature environments, and is widely used in power conversion and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFX66N50Q2-VB parameter description
- **Package type**: TO247
- **Type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Drain current (ID)**: 47A
- **Technology**: Super junction (SJ) multi-layer epitaxial (Multi-EPI) technology
- **Package type**: TO247
- **Type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Drain current (ID)**: 47A
- **Technology**: Super junction (SJ) multi-layer epitaxial (Multi-EPI) technology
Domain and module applications：
3. Application fields and module examples
1. **High-voltage switching power supply**: IXFX66N50Q2-VB is very suitable for high-voltage switching power supply (Switching Power Supply) and DC-DC converter (DC-DC Converter). Its high withstand voltage and low on-resistance characteristics enable it to effectively reduce power consumption and improve power conversion efficiency, and is widely used in industrial and consumer power systems.
2. **Electric vehicle drive system**: In the motor controller of electric vehicles, this MOSFET can provide reliable high current support to ensure smooth operation under high load conditions. Its high voltage carrying capacity makes it an ideal choice for electric vehicle drive systems.
3. **Photovoltaic inverter**: IXFX66N50Q2-VB can be used for inverters in photovoltaic power generation systems to convert DC power into AC power. Its high efficiency and reliability ensure stable operation under different climatic conditions and improve the overall power generation efficiency of photovoltaic systems.
4. **Industrial Automation**: In industrial automation equipment, this MOSFET can be used to drive large servo motors and solenoid valves to provide stable current support. Its high conductivity and voltage resistance ensure the reliability and stability of the equipment in harsh environments.
In summary, the IXFX66N50Q2-VB is a MOSFET designed for high voltage and high efficiency applications. It is widely used in power management, electric vehicles, photovoltaic power generation, and industrial automation to meet various high performance power needs.
1. **High-voltage switching power supply**: IXFX66N50Q2-VB is very suitable for high-voltage switching power supply (Switching Power Supply) and DC-DC converter (DC-DC Converter). Its high withstand voltage and low on-resistance characteristics enable it to effectively reduce power consumption and improve power conversion efficiency, and is widely used in industrial and consumer power systems.
2. **Electric vehicle drive system**: In the motor controller of electric vehicles, this MOSFET can provide reliable high current support to ensure smooth operation under high load conditions. Its high voltage carrying capacity makes it an ideal choice for electric vehicle drive systems.
3. **Photovoltaic inverter**: IXFX66N50Q2-VB can be used for inverters in photovoltaic power generation systems to convert DC power into AC power. Its high efficiency and reliability ensure stable operation under different climatic conditions and improve the overall power generation efficiency of photovoltaic systems.
4. **Industrial Automation**: In industrial automation equipment, this MOSFET can be used to drive large servo motors and solenoid valves to provide stable current support. Its high conductivity and voltage resistance ensure the reliability and stability of the equipment in harsh environments.
In summary, the IXFX66N50Q2-VB is a MOSFET designed for high voltage and high efficiency applications. It is widely used in power management, electric vehicles, photovoltaic power generation, and industrial automation to meet various high performance power needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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