中文
English
IXFX64N60Q3-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IXFX64N60Q3-VB is a high-performance N-channel MOSFET in TO247 package, using advanced SJ (super junction) and multi-layer EPI technology. This MOSFET has a drain-source breakdown voltage (VDS) of 650V, which is very suitable for high-voltage applications. Its rated current is 47A and its on-resistance is 75mΩ@VGS=10V, ensuring excellent current conduction performance in high-power applications. IXFX64N60Q3-VB is widely used in power conversion, switching circuits and other power management systems that require high efficiency and high stability.
IXFX64N60Q3-VB is a high-performance N-channel MOSFET in TO247 package, using advanced SJ (super junction) and multi-layer EPI technology. This MOSFET has a drain-source breakdown voltage (VDS) of 650V, which is very suitable for high-voltage applications. Its rated current is 47A and its on-resistance is 75mΩ@VGS=10V, ensuring excellent current conduction performance in high-power applications. IXFX64N60Q3-VB is widely used in power conversion, switching circuits and other power management systems that require high efficiency and high stability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Continuous drain current (ID)**: 47A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Continuous drain current (ID)**: 47A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples:
1. **Power converter**: IXFX64N60Q3-VB is widely used in power converters, especially in high-voltage environments. These converters require efficient current management when converting AC power to DC power, and can provide stable output voltage, which is suitable for industrial and commercial power supplies.
2. **Inverter**: In inverter applications, the high voltage capability and low on-resistance characteristics of this MOSFET make it very suitable for driving motors. It can handle currents up to 47A, ensuring the smoothness and efficiency of the motor during startup and operation.
3. **Photovoltaic inverter**: IXFX64N60Q3-VB performs well in inverter modules in photovoltaic systems. Its 650V withstand voltage enables it to effectively convert solar power at high voltage and optimize the energy utilization efficiency of the system.
4. **Switching Power Supply (SMPS)**: The low on-resistance and high withstand voltage performance of this MOSFET make it an ideal choice for switching power supply design, which can improve system efficiency and reduce power consumption. It is widely used in computer power supplies, consumer electronics and other power equipment.
Due to its excellent performance and stability, IXFX64N60Q3-VB has become an important component of efficient power management solutions in many fields to meet various power needs.
1. **Power converter**: IXFX64N60Q3-VB is widely used in power converters, especially in high-voltage environments. These converters require efficient current management when converting AC power to DC power, and can provide stable output voltage, which is suitable for industrial and commercial power supplies.
2. **Inverter**: In inverter applications, the high voltage capability and low on-resistance characteristics of this MOSFET make it very suitable for driving motors. It can handle currents up to 47A, ensuring the smoothness and efficiency of the motor during startup and operation.
3. **Photovoltaic inverter**: IXFX64N60Q3-VB performs well in inverter modules in photovoltaic systems. Its 650V withstand voltage enables it to effectively convert solar power at high voltage and optimize the energy utilization efficiency of the system.
4. **Switching Power Supply (SMPS)**: The low on-resistance and high withstand voltage performance of this MOSFET make it an ideal choice for switching power supply design, which can improve system efficiency and reduce power consumption. It is widely used in computer power supplies, consumer electronics and other power equipment.
Due to its excellent performance and stability, IXFX64N60Q3-VB has become an important component of efficient power management solutions in many fields to meet various power needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
