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IXFX64N60P3-VB Product details
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Product Introduction
IXFX64N60P3-VB is a high-performance N-channel power MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V, the device is suitable for operation in harsh power conversion environments. Its on-resistance (RDS(ON)) is 75mΩ at VGS=10V and the maximum drain current (ID) is 47A. This MOSFET uses SJ_Multi-EPI technology to ensure excellent electrical performance and thermal management capabilities, making it an excellent performer in high-efficiency power conversion.
IXFX64N60P3-VB is a high-performance N-channel power MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage (VDS) of up to 650V and a gate-source voltage (VGS) of ±30V, the device is suitable for operation in harsh power conversion environments. Its on-resistance (RDS(ON)) is 75mΩ at VGS=10V and the maximum drain current (ID) is 47A. This MOSFET uses SJ_Multi-EPI technology to ensure excellent electrical performance and thermal management capabilities, making it an excellent performer in high-efficiency power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
7. **Drain current (ID)**: 47A
8. **Technology type**: Super Junction SJ_Multi-EPI technology
9. **Switching speed**: Support high-frequency fast switching
10. **Power consumption**: Good heat dissipation performance, suitable for high power density design
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 650V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
7. **Drain current (ID)**: 47A
8. **Technology type**: Super Junction SJ_Multi-EPI technology
9. **Switching speed**: Support high-frequency fast switching
10. **Power consumption**: Good heat dissipation performance, suitable for high power density design
Domain and module applications：
Applications and modules
1. **Power converter**: IXFX64N60P3-VB performs well in high-voltage power converters and can efficiently perform DC-DC conversion. It is widely used in industrial power supplies and high-voltage power supply systems to ensure stable and efficient power transmission.
2. **Photovoltaic inverter**: Due to its high voltage and low on-resistance characteristics, this MOSFET is an ideal choice for solar photovoltaic inverters. It can efficiently convert the DC power generated by photovoltaic panels into AC power, thereby improving energy efficiency.
3. **Switching power supply (SMPS)**: IXFX64N60P3-VB can achieve efficient power conversion and reduce energy loss in switching power supplies. It is widely used in power modules of computer power supplies and communication equipment.
4. **Uninterruptible power supply (UPS)**: In uninterruptible power supply systems, this MOSFET can provide efficient power management to ensure that key equipment obtains stable power supply in the event of a power outage and ensures its normal operation.
5. **Motor drive control**: The IXFX64N60P3-VB can quickly respond to and control the operating status of the motor, and is suitable for motor drive systems in the fields of industrial automation, robotics, etc., to improve work efficiency and system reliability.
These applications show the wide applicability of the IXFX64N60P3-VB in high-voltage power electronic equipment, especially in power conversion situations that require high efficiency and high reliability.
1. **Power converter**: IXFX64N60P3-VB performs well in high-voltage power converters and can efficiently perform DC-DC conversion. It is widely used in industrial power supplies and high-voltage power supply systems to ensure stable and efficient power transmission.
2. **Photovoltaic inverter**: Due to its high voltage and low on-resistance characteristics, this MOSFET is an ideal choice for solar photovoltaic inverters. It can efficiently convert the DC power generated by photovoltaic panels into AC power, thereby improving energy efficiency.
3. **Switching power supply (SMPS)**: IXFX64N60P3-VB can achieve efficient power conversion and reduce energy loss in switching power supplies. It is widely used in power modules of computer power supplies and communication equipment.
4. **Uninterruptible power supply (UPS)**: In uninterruptible power supply systems, this MOSFET can provide efficient power management to ensure that key equipment obtains stable power supply in the event of a power outage and ensures its normal operation.
5. **Motor drive control**: The IXFX64N60P3-VB can quickly respond to and control the operating status of the motor, and is suitable for motor drive systems in the fields of industrial automation, robotics, etc., to improve work efficiency and system reliability.
These applications show the wide applicability of the IXFX64N60P3-VB in high-voltage power electronic equipment, especially in power conversion situations that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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