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IXFX64N50Q3-VB Product details
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1. Product Introduction:
IXFX64N50Q3-VB is a high voltage single N-channel power MOSFET in TO247 package with 500V drain-source voltage (VDS) and 40A maximum continuous drain current (ID). This MOSFET uses multi-EPI (SJ_Multi-EPI) technology to optimize its performance and has low on-resistance (RDS(ON)=80mΩ@VGS=10V), making it perform well in high-power applications. IXFX64N50Q3-VB is designed for high-efficiency power management and power conversion systems, suitable for use in harsh environments.
IXFX64N50Q3-VB is a high voltage single N-channel power MOSFET in TO247 package with 500V drain-source voltage (VDS) and 40A maximum continuous drain current (ID). This MOSFET uses multi-EPI (SJ_Multi-EPI) technology to optimize its performance and has low on-resistance (RDS(ON)=80mΩ@VGS=10V), making it perform well in high-power applications. IXFX64N50Q3-VB is designed for high-efficiency power management and power conversion systems, suitable for use in harsh environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Maximum pulsed drain current (ID, Pulse)**: Higher than 40A, depending on heat dissipation conditions
- **Technology**: Multi-EPI (SJ_Multi-EPI) technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: A certain power can be achieved under good heat dissipation conditions
- **Switching speed**: Suitable for high-frequency applications
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Maximum pulsed drain current (ID, Pulse)**: Higher than 40A, depending on heat dissipation conditions
- **Technology**: Multi-EPI (SJ_Multi-EPI) technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: A certain power can be achieved under good heat dissipation conditions
- **Switching speed**: Suitable for high-frequency applications
Domain and module applications：
3. Applications and module examples:
IXFX64N50Q3-VB performs well in a variety of high voltage and high power applications. Here are some specific application areas:
- **Switching Power Supply (SMPS)**: In high voltage switching power supplies and DC-DC converters, the high voltage carrying capacity and low on-resistance of IXFX64N50Q3-VB enable it to effectively improve energy conversion efficiency and reduce system heat loss.
- **Industrial Motor Drive**: Suitable for industrial automation and motor control systems, IXFX64N50Q3-VB provides reliable current control to ensure efficient operation of the motor under different load conditions, especially suitable for high voltage applications.
- **Renewable Energy Systems**: In solar inverters and wind power generation systems, this MOSFET can be used for efficient energy conversion, supporting system stability and power generation efficiency.
- **High Voltage Power Module**: In medical devices, communications equipment, and other applications that require high voltage power supply, the IXFX64N50Q3-VB provides stable power output to ensure safe operation of the equipment under harsh conditions.
With its excellent electrical characteristics and reliability, the IXFX64N50Q3-VB is an ideal choice for high-performance power management and power control applications.
IXFX64N50Q3-VB performs well in a variety of high voltage and high power applications. Here are some specific application areas:
- **Switching Power Supply (SMPS)**: In high voltage switching power supplies and DC-DC converters, the high voltage carrying capacity and low on-resistance of IXFX64N50Q3-VB enable it to effectively improve energy conversion efficiency and reduce system heat loss.
- **Industrial Motor Drive**: Suitable for industrial automation and motor control systems, IXFX64N50Q3-VB provides reliable current control to ensure efficient operation of the motor under different load conditions, especially suitable for high voltage applications.
- **Renewable Energy Systems**: In solar inverters and wind power generation systems, this MOSFET can be used for efficient energy conversion, supporting system stability and power generation efficiency.
- **High Voltage Power Module**: In medical devices, communications equipment, and other applications that require high voltage power supply, the IXFX64N50Q3-VB provides stable power output to ensure safe operation of the equipment under harsh conditions.
With its excellent electrical characteristics and reliability, the IXFX64N50Q3-VB is an ideal choice for high-performance power management and power control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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