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IXFX64N50P-VB Product details
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IXFX64N50P-VB MOSFET Product Introduction:
IXFX64N50P-VB is a high-voltage N-channel power MOSFET that uses advanced SJ_Multi-EPI technology and is packaged in a TO247 housing. The device has a drain-source withstand voltage (VDS) of up to 500V and can carry a drain current (ID) of 40A, making it ideal for high-voltage and high-current applications. Its on-resistance (RDS(ON)) is 80mΩ (at VGS = 10V), enabling low losses during power conversion. The gate threshold voltage (Vth) of this MOSFET is 3.8V, ensuring its stability and reliability under a variety of drive voltages, making it an indispensable component in modern high-power electronic designs.
IXFX64N50P-VB is a high-voltage N-channel power MOSFET that uses advanced SJ_Multi-EPI technology and is packaged in a TO247 housing. The device has a drain-source withstand voltage (VDS) of up to 500V and can carry a drain current (ID) of 40A, making it ideal for high-voltage and high-current applications. Its on-resistance (RDS(ON)) is 80mΩ (at VGS = 10V), enabling low losses during power conversion. The gate threshold voltage (Vth) of this MOSFET is 3.8V, ensuring its stability and reliability under a variety of drive voltages, making it an indispensable component in modern high-power electronic designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
1. **Package type**: TO247
2. **Configuration**: Single-N-Channel
3. **Drain-source withstand voltage (VDS)**: 500V
4. **Gate-source withstand voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
9. **Operating junction temperature range**: -55°C to +175°C
10. **Switching speed**: Suitable for high-frequency applications
1. **Package type**: TO247
2. **Configuration**: Single-N-Channel
3. **Drain-source withstand voltage (VDS)**: 500V
4. **Gate-source withstand voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
9. **Operating junction temperature range**: -55°C to +175°C
10. **Switching speed**: Suitable for high-frequency applications
Domain and module applications：
Applicable fields and application modules:
- **Power converter**: IXFX64N50P-VB is widely used in switching power supplies (SMPS) and DC-DC converters. Its high voltage tolerance and low on-resistance make it excellent in high power conversion, which can effectively improve energy efficiency and reduce heat loss.
- **Industrial automation**: This MOSFET is suitable for motor drive and industrial automation control systems, which can provide stable power output, support high-speed equipment response, and ensure the efficient operation of industrial systems.
- **Uninterruptible power supply (UPS) system**: IXFX64N50P-VB is used as a switching element in UPS and backup power systems, supporting high current and high voltage energy management, and enhancing system reliability and safety.
- **Electric vehicles (EV) and charging facilities**: This device is suitable for power management and charging modules of electric vehicles, which can handle high voltage and high current, improve charging efficiency, and meet the needs of fast charging.
- **Renewable Energy Systems**: In solar inverters, the IXFX64N50P-VB can be used for power conversion, ensuring efficient DC to AC conversion, thereby improving the overall performance of photovoltaic systems.
In general, the IXFX64N50P-VB provides an efficient and reliable solution for modern high-voltage power electronic systems with its excellent electrical performance and wide range of applications.
- **Power converter**: IXFX64N50P-VB is widely used in switching power supplies (SMPS) and DC-DC converters. Its high voltage tolerance and low on-resistance make it excellent in high power conversion, which can effectively improve energy efficiency and reduce heat loss.
- **Industrial automation**: This MOSFET is suitable for motor drive and industrial automation control systems, which can provide stable power output, support high-speed equipment response, and ensure the efficient operation of industrial systems.
- **Uninterruptible power supply (UPS) system**: IXFX64N50P-VB is used as a switching element in UPS and backup power systems, supporting high current and high voltage energy management, and enhancing system reliability and safety.
- **Electric vehicles (EV) and charging facilities**: This device is suitable for power management and charging modules of electric vehicles, which can handle high voltage and high current, improve charging efficiency, and meet the needs of fast charging.
- **Renewable Energy Systems**: In solar inverters, the IXFX64N50P-VB can be used for power conversion, ensuring efficient DC to AC conversion, thereby improving the overall performance of photovoltaic systems.
In general, the IXFX64N50P-VB provides an efficient and reliable solution for modern high-voltage power electronic systems with its excellent electrical performance and wide range of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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