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IXFX48N60Q3-VB Product details
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1. IXFX48N60Q3-VB MOSFET Product Introduction
IXFX48N60Q3-VB is a high-voltage, high-power single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and adopts advanced super junction (SJ) multi-epitaxial (Multi-EPI) technology. Its on-resistance (RDS(ON)) is 75mΩ at VGS=10V, and the maximum drain current can reach 47A. The high voltage and low conduction loss of IXFX48N60Q3-VB make it very suitable for high-efficiency switching circuits and power management systems, which can significantly improve overall energy efficiency and reduce heat generation.
IXFX48N60Q3-VB is a high-voltage, high-power single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, and adopts advanced super junction (SJ) multi-epitaxial (Multi-EPI) technology. Its on-resistance (RDS(ON)) is 75mΩ at VGS=10V, and the maximum drain current can reach 47A. The high voltage and low conduction loss of IXFX48N60Q3-VB make it very suitable for high-efficiency switching circuits and power management systems, which can significantly improve overall energy efficiency and reduce heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFX48N60Q3-VB detailed parameter description
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
- **Power consumption capability**: High-efficiency switching applications
- **Operating frequency**: Suitable for medium and high frequency switching circuits
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Maximum drain current (ID)**: 47A
- **Technology**: Super junction (SJ) multi-epitaxial (Multi-EPI)
- **Power consumption capability**: High-efficiency switching applications
- **Operating frequency**: Suitable for medium and high frequency switching circuits
Domain and module applications：
3. Application fields and modules
IXFX48N60Q3-VB MOSFET is widely used in many fields due to its superior electrical performance, especially in the following modules and scenarios:
1. **High-voltage power converter**:
IXFX48N60Q3-VB is very suitable for AC-DC and DC-DC power converters, especially in industrial power supplies and power adapters, which can effectively improve energy conversion efficiency and reduce switching losses.
2. **Electric vehicles and charging infrastructure**:
In the inverters and charging piles of electric vehicles, this MOSFET can handle high voltage and high current, provide stable power output, and improve the charging efficiency and power performance of electric vehicles.
3. **Solar inverter**:
The 650V withstand voltage characteristics of IXFX48N60Q3-VB make it perform well in solar inverters, which can effectively manage the high voltage output from photovoltaic panels and ensure the high efficiency of energy conversion.
4. **Industrial Automation Equipment**:
In industrial control and automation applications, IXFX48N60Q3-VB can be used for motor drive and high-voltage load management to optimize the response speed and operating efficiency of equipment.
5. **Uninterruptible Power Supply (UPS) System**:
This MOSFET can effectively manage power conversion in UPS systems, ensure stable power output when power fluctuates, and improve system reliability.
IXFX48N60Q3-VB MOSFET is widely used in many fields due to its superior electrical performance, especially in the following modules and scenarios:
1. **High-voltage power converter**:
IXFX48N60Q3-VB is very suitable for AC-DC and DC-DC power converters, especially in industrial power supplies and power adapters, which can effectively improve energy conversion efficiency and reduce switching losses.
2. **Electric vehicles and charging infrastructure**:
In the inverters and charging piles of electric vehicles, this MOSFET can handle high voltage and high current, provide stable power output, and improve the charging efficiency and power performance of electric vehicles.
3. **Solar inverter**:
The 650V withstand voltage characteristics of IXFX48N60Q3-VB make it perform well in solar inverters, which can effectively manage the high voltage output from photovoltaic panels and ensure the high efficiency of energy conversion.
4. **Industrial Automation Equipment**:
In industrial control and automation applications, IXFX48N60Q3-VB can be used for motor drive and high-voltage load management to optimize the response speed and operating efficiency of equipment.
5. **Uninterruptible Power Supply (UPS) System**:
This MOSFET can effectively manage power conversion in UPS systems, ensure stable power output when power fluctuates, and improve system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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