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IXFX48N60P-VB Product details
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1. IXFX48N60P-VB Product Introduction
IXFX48N60P-VB is a high-performance single N-channel power MOSFET in TO247 package, designed for high voltage applications. The device can withstand a drain-source voltage (VDS) of up to 650V, suitable for handling harsh voltage conditions. Its threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 75mΩ at a gate voltage of 10V, supporting a maximum drain current (ID) of 47A. IXFX48N60P-VB uses advanced super junction (SJ) multi-layer epitaxial technology to ensure stability and high efficiency under high load and high temperature environments, making it ideal for power conversion and drive applications.
IXFX48N60P-VB is a high-performance single N-channel power MOSFET in TO247 package, designed for high voltage applications. The device can withstand a drain-source voltage (VDS) of up to 650V, suitable for handling harsh voltage conditions. Its threshold voltage (Vth) is 3.5V, and the on-resistance (RDS(ON)) is 75mΩ at a gate voltage of 10V, supporting a maximum drain current (ID) of 47A. IXFX48N60P-VB uses advanced super junction (SJ) multi-layer epitaxial technology to ensure stability and high efficiency under high load and high temperature environments, making it ideal for power conversion and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFX48N60P-VB parameter description
- **Package type**: TO247
- **Type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Drain current (ID)**: 47A
- **Technology**: Super junction (SJ) multi-layer epitaxial (Multi-EPI) technology
- **Package type**: TO247
- **Type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS = 10V
- **Drain current (ID)**: 47A
- **Technology**: Super junction (SJ) multi-layer epitaxial (Multi-EPI) technology
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power supply**: IXFX48N60P-VB is very suitable for high-voltage switching power supply (Switching Power Supply) and DC-DC converter (DC-DC Converter). Its high voltage resistance and low on-resistance enable it to achieve high efficiency and reduce power consumption during power conversion, and is widely used in industrial and commercial power systems.
2. **Electric vehicle drive**: In the motor control system of electric vehicles, this MOSFET can provide reliable high current support. Its high voltage and high current capabilities make it suitable for the drive circuit of electric vehicles to ensure smooth operation under high load conditions.
3. **Photovoltaic inverter**: IXFX48N60P-VB can be used for inverters in photovoltaic power generation systems, responsible for converting DC power generated by solar panels into AC power. Its high efficiency and reliability are crucial in photovoltaic systems, which can improve power generation efficiency and system stability.
4. **Industrial Automation Equipment**: In industrial automation and control systems, this MOSFET can be used to drive high-power devices such as servo motors and solenoid valves. Its excellent conductivity and voltage resistance ensure the reliable operation of industrial equipment under high load and high temperature environments.
In summary, the IXFX48N60P-VB is a MOSFET designed for high voltage and high-efficiency applications. It is widely used in power management, electric vehicles, photovoltaic power generation, and industrial equipment to meet a variety of high-performance power needs.
1. **High-voltage power supply**: IXFX48N60P-VB is very suitable for high-voltage switching power supply (Switching Power Supply) and DC-DC converter (DC-DC Converter). Its high voltage resistance and low on-resistance enable it to achieve high efficiency and reduce power consumption during power conversion, and is widely used in industrial and commercial power systems.
2. **Electric vehicle drive**: In the motor control system of electric vehicles, this MOSFET can provide reliable high current support. Its high voltage and high current capabilities make it suitable for the drive circuit of electric vehicles to ensure smooth operation under high load conditions.
3. **Photovoltaic inverter**: IXFX48N60P-VB can be used for inverters in photovoltaic power generation systems, responsible for converting DC power generated by solar panels into AC power. Its high efficiency and reliability are crucial in photovoltaic systems, which can improve power generation efficiency and system stability.
4. **Industrial Automation Equipment**: In industrial automation and control systems, this MOSFET can be used to drive high-power devices such as servo motors and solenoid valves. Its excellent conductivity and voltage resistance ensure the reliable operation of industrial equipment under high load and high temperature environments.
In summary, the IXFX48N60P-VB is a MOSFET designed for high voltage and high-efficiency applications. It is widely used in power management, electric vehicles, photovoltaic power generation, and industrial equipment to meet a variety of high-performance power needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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