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IXFX48N50Q-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IXFX48N50Q-VB is a high-performance N-channel MOSFET in TO247 package, using advanced SJ (super junction) and multi-layer EPI technology. This MOSFET has a drain-source breakdown voltage (VDS) of 500V, suitable for medium and high voltage applications. Its rated current is 40A and its on-resistance is 80mΩ@VGS=10V, ensuring superior performance in high-power applications. IXFX48N50Q-VB is widely used in power conversion, switching circuits and other high-efficiency energy management solutions, and is an ideal choice for high-efficiency designs.
IXFX48N50Q-VB is a high-performance N-channel MOSFET in TO247 package, using advanced SJ (super junction) and multi-layer EPI technology. This MOSFET has a drain-source breakdown voltage (VDS) of 500V, suitable for medium and high voltage applications. Its rated current is 40A and its on-resistance is 80mΩ@VGS=10V, ensuring superior performance in high-power applications. IXFX48N50Q-VB is widely used in power conversion, switching circuits and other high-efficiency energy management solutions, and is an ideal choice for high-efficiency designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples:
1. **Power adapter**: IXFX48N50Q-VB is very suitable for power adapters, especially in applications that require high efficiency and reliability. Its 500V withstand voltage and low on-resistance enable it to provide stable performance in power conversion and is suitable for a variety of consumer electronics.
2. **Industrial power**: In industrial power systems, this MOSFET can support up to 40A of continuous current and is suitable for motor drive and power management modules, which can effectively improve the efficiency and stability of the system.
3. **Photovoltaic inverter**: IXFX48N50Q-VB is also widely used in inverters in photovoltaic systems. The high efficiency of this MOSFET at high voltage ensures the effective conversion of solar power and optimizes the overall efficiency of the system.
4. **Inverter**: In inverter applications, this MOSFET can handle a high voltage of 500V and is suitable for driving various motors. Its efficient switching performance and low loss characteristics make it an important application in motor control and drive systems.
With its excellent performance and reliability, IXFX48N50Q-VB has become the preferred component for efficient power management solutions in multiple fields, meeting a variety of application requirements.
1. **Power adapter**: IXFX48N50Q-VB is very suitable for power adapters, especially in applications that require high efficiency and reliability. Its 500V withstand voltage and low on-resistance enable it to provide stable performance in power conversion and is suitable for a variety of consumer electronics.
2. **Industrial power**: In industrial power systems, this MOSFET can support up to 40A of continuous current and is suitable for motor drive and power management modules, which can effectively improve the efficiency and stability of the system.
3. **Photovoltaic inverter**: IXFX48N50Q-VB is also widely used in inverters in photovoltaic systems. The high efficiency of this MOSFET at high voltage ensures the effective conversion of solar power and optimizes the overall efficiency of the system.
4. **Inverter**: In inverter applications, this MOSFET can handle a high voltage of 500V and is suitable for driving various motors. Its efficient switching performance and low loss characteristics make it an important application in motor control and drive systems.
With its excellent performance and reliability, IXFX48N50Q-VB has become the preferred component for efficient power management solutions in multiple fields, meeting a variety of application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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