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IXFX44N80Q3-VB Product details
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IXFX44N80Q3-VB Product Introduction
The IXFX44N80Q3-VB is a high-efficiency single N-channel MOSFET in a TO247 package. It has a breakdown voltage (VDS) of 800V, a gate drive voltage range of ±30V (VGS), and an on-resistance (RDS(ON)) of 90mΩ at VGS = 10V. The device is capable of carrying a rated current of up to 47A and uses Super Junction multi-layer EPI technology to optimize switching performance and reduce conduction losses, making it suitable for a variety of high-power applications.
The IXFX44N80Q3-VB is a high-efficiency single N-channel MOSFET in a TO247 package. It has a breakdown voltage (VDS) of 800V, a gate drive voltage range of ±30V (VGS), and an on-resistance (RDS(ON)) of 90mΩ at VGS = 10V. The device is capable of carrying a rated current of up to 47A and uses Super Junction multi-layer EPI technology to optimize switching performance and reduce conduction losses, making it suitable for a variety of high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | 90mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
| Parameter name| Value| Unit|
|------------------|--------------------|------|
| **Package type** | TO247 | - |
| **Channel type** | N-Channel | - |
| **Breakdown voltage (VDS)** | 800 | V |
| **Gate voltage (VGS)** | ±30 | V |
| **Threshold voltage (Vth)** | 3.5 | V |
| **On-resistance (RDS(ON))** | 90mΩ @ VGS=10V | mΩ |
| **Rated current (ID)** | 47 | A |
| **Technology** | SJ_Multi-EPI | - |
| Parameter name| Value| Unit|
|------------------|--------------------|------|
| **Package type** | TO247 | - |
| **Channel type** | N-Channel | - |
| **Breakdown voltage (VDS)** | 800 | V |
| **Gate voltage (VGS)** | ±30 | V |
| **Threshold voltage (Vth)** | 3.5 | V |
| **On-resistance (RDS(ON))** | 90mΩ @ VGS=10V | mΩ |
| **Rated current (ID)** | 47 | A |
| **Technology** | SJ_Multi-EPI | - |
Domain and module applications：
Application fields and module examples
1. **High-voltage power supply system**:
IXFX44N80Q3-VB is very suitable for high-voltage power supply and switching power supply design. Its high breakdown voltage and low conduction loss characteristics can effectively improve the efficiency of the power supply, reduce heat, and ensure the stability and reliability of the system.
2. **Electric vehicle charging device**:
This MOSFET can be widely used in electric vehicle charging devices to handle high voltage and high current requirements. Its high efficiency can increase charging speed, optimize energy utilization, and meet the market demand for modern fast charging.
3. **Solar inverter**:
IXFX44N80Q3-VB is ideal for use in solar inverters and can work stably in high voltage environments. Its excellent switching performance can improve the energy conversion efficiency of the system and provide a reliable solution for photovoltaic applications.
4. **Industrial Motor Drive and Control**:
This MOSFET is also suitable for motor drive and control systems in industrial equipment, supporting efficient drive of high-voltage motors. Its strong current handling capability ensures normal operation of the equipment under high load conditions, improving the reliability and life of the system.
1. **High-voltage power supply system**:
IXFX44N80Q3-VB is very suitable for high-voltage power supply and switching power supply design. Its high breakdown voltage and low conduction loss characteristics can effectively improve the efficiency of the power supply, reduce heat, and ensure the stability and reliability of the system.
2. **Electric vehicle charging device**:
This MOSFET can be widely used in electric vehicle charging devices to handle high voltage and high current requirements. Its high efficiency can increase charging speed, optimize energy utilization, and meet the market demand for modern fast charging.
3. **Solar inverter**:
IXFX44N80Q3-VB is ideal for use in solar inverters and can work stably in high voltage environments. Its excellent switching performance can improve the energy conversion efficiency of the system and provide a reliable solution for photovoltaic applications.
4. **Industrial Motor Drive and Control**:
This MOSFET is also suitable for motor drive and control systems in industrial equipment, supporting efficient drive of high-voltage motors. Its strong current handling capability ensures normal operation of the equipment under high load conditions, improving the reliability and life of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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