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IXFX44N80P-VB Product details
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Product Introduction
IXFX44N80P-VB is a high-performance N-channel power MOSFET in TO247 package, designed for high-voltage and high-current applications. The device has a drain-source voltage (VDS) of up to 800V and a gate-source voltage (VGS) of ±30V, suitable for high-efficiency power conversion scenarios. Its on-resistance (RDS(ON)) is only 90mΩ at VGS=10V, and the maximum drain current (ID) reaches 47A. IXFX44N80P-VB uses SJ_Multi-EPI technology, which provides excellent conduction performance and good thermal management characteristics to ensure stable operation in high-voltage environments.
IXFX44N80P-VB is a high-performance N-channel power MOSFET in TO247 package, designed for high-voltage and high-current applications. The device has a drain-source voltage (VDS) of up to 800V and a gate-source voltage (VGS) of ±30V, suitable for high-efficiency power conversion scenarios. Its on-resistance (RDS(ON)) is only 90mΩ at VGS=10V, and the maximum drain current (ID) reaches 47A. IXFX44N80P-VB uses SJ_Multi-EPI technology, which provides excellent conduction performance and good thermal management characteristics to ensure stable operation in high-voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | 90mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 90mΩ @ VGS=10V
7. **Drain current (ID)**: 47A
8. **Technology type**: Super Junction SJ_Multi-EPI technology
9. **Switching speed**: Supports fast switching operation, suitable for high-frequency applications
10. **Power consumption**: Has good thermal management capabilities, suitable for high power density design
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 90mΩ @ VGS=10V
7. **Drain current (ID)**: 47A
8. **Technology type**: Super Junction SJ_Multi-EPI technology
9. **Switching speed**: Supports fast switching operation, suitable for high-frequency applications
10. **Power consumption**: Has good thermal management capabilities, suitable for high power density design
Domain and module applications：
Applications and modules
1. **Power converter**: IXFX44N80P-VB performs well in power converters and can efficiently handle the conversion of high-voltage DC power. It is widely used in industrial power supplies and high-voltage power supply systems to ensure efficient power transmission.
2. **Photovoltaic inverter**: This MOSFET is suitable for solar photovoltaic inverters, which can efficiently convert the DC power generated by photovoltaic cells into AC power, maximize energy efficiency, and adapt to changing load conditions.
3. **Switching power supply (SMPS)**: IXFX44N80P-VB is suitable for high-voltage and high-current switching power supplies, which can reduce energy loss and improve overall system efficiency. It is widely used in computer power supplies and communication equipment.
4. **Uninterruptible power supply (UPS)**: In uninterruptible power supply systems, IXFX44N80P-VB provides efficient power management to ensure that critical equipment obtains stable power in the event of a power outage.
5. **Motor drive control**: The device can quickly respond and control the motor operation status, suitable for motor drive systems in industrial automation and robotics technology to improve work efficiency and reliability.
These applications show the wide applicability of IXFX44N80P-VB in high-voltage power electronic equipment, especially in power conversion situations that require high efficiency and high reliability.
1. **Power converter**: IXFX44N80P-VB performs well in power converters and can efficiently handle the conversion of high-voltage DC power. It is widely used in industrial power supplies and high-voltage power supply systems to ensure efficient power transmission.
2. **Photovoltaic inverter**: This MOSFET is suitable for solar photovoltaic inverters, which can efficiently convert the DC power generated by photovoltaic cells into AC power, maximize energy efficiency, and adapt to changing load conditions.
3. **Switching power supply (SMPS)**: IXFX44N80P-VB is suitable for high-voltage and high-current switching power supplies, which can reduce energy loss and improve overall system efficiency. It is widely used in computer power supplies and communication equipment.
4. **Uninterruptible power supply (UPS)**: In uninterruptible power supply systems, IXFX44N80P-VB provides efficient power management to ensure that critical equipment obtains stable power in the event of a power outage.
5. **Motor drive control**: The device can quickly respond and control the motor operation status, suitable for motor drive systems in industrial automation and robotics technology to improve work efficiency and reliability.
These applications show the wide applicability of IXFX44N80P-VB in high-voltage power electronic equipment, especially in power conversion situations that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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