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IXFX420N10T-VB Product details
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Product Introduction:
IXFX420N10T-VB is a high-performance unipolar N-channel MOSFET in TO247 package, designed for high current and high efficiency switching applications. The device has a rated drain-source voltage of 100V and a maximum drain current of 320A. It uses advanced Trench technology to ensure that it has extremely low on-resistance (2mΩ@VGS=10V). IXFX420N10T-VB is suitable for a variety of power management and conversion applications and is an ideal choice for implementing efficient power solutions.
IXFX420N10T-VB is a high-performance unipolar N-channel MOSFET in TO247 package, designed for high current and high efficiency switching applications. The device has a rated drain-source voltage of 100V and a maximum drain current of 320A. It uses advanced Trench technology to ensure that it has extremely low on-resistance (2mΩ@VGS=10V). IXFX420N10T-VB is suitable for a variety of power management and conversion applications and is an ideal choice for implementing efficient power solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Package type**: TO247
- **Channel configuration**: Single N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
- **Drain current (ID)**: 320A
- **Technology type**: Trench
- **Operating temperature range**: Typically -55°C to 175°C
- **Power consumption**: High power handling capability, suitable for high current applications
- **Breakdown voltage**: 100V
- **Drain current saturation region current**: 320A (continuous), with excellent thermal performance
- **Package type**: TO247
- **Channel configuration**: Single N channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
- **Drain current (ID)**: 320A
- **Technology type**: Trench
- **Operating temperature range**: Typically -55°C to 175°C
- **Power consumption**: High power handling capability, suitable for high current applications
- **Breakdown voltage**: 100V
- **Drain current saturation region current**: 320A (continuous), with excellent thermal performance
Domain and module applications：
Application areas and module examples:
1. **High-efficiency power converters**: The IXFX420N10T-VB performs well in DC-DC converters and AC-DC power modules, and is suitable for applications that require high current and low conduction losses, such as industrial power supplies, data center power supplies, and consumer electronics.
2. **Electric vehicles**: This MOSFET can be used in motor drives and battery management systems for electric vehicles, providing efficient power conversion capabilities, supporting fast charging and high power output, thereby improving the performance and energy efficiency of the entire vehicle.
3. **Renewable energy systems**: The IXFX420N10T-VB is suitable for solar inverters and wind power generation systems, helping to achieve efficient power conversion at high power output, improving the overall efficiency and reliability of the system.
4. **Uninterruptible power supply (UPS)**: In UPS systems, the device is able to handle high currents, ensuring stable power supply to the load during power outages, preventing data loss and equipment damage.
5. **Industrial Automation**: IXFX420N10T-VB can also be used in high-power switches and driver modules in various industrial equipment and automation systems, providing strong current support and efficient power management capabilities to adapt to rapidly changing load requirements.
With its excellent performance, IXFX420N10T-VB is an ideal choice for a variety of high-performance power management applications, which can significantly improve system efficiency and reliability.
1. **High-efficiency power converters**: The IXFX420N10T-VB performs well in DC-DC converters and AC-DC power modules, and is suitable for applications that require high current and low conduction losses, such as industrial power supplies, data center power supplies, and consumer electronics.
2. **Electric vehicles**: This MOSFET can be used in motor drives and battery management systems for electric vehicles, providing efficient power conversion capabilities, supporting fast charging and high power output, thereby improving the performance and energy efficiency of the entire vehicle.
3. **Renewable energy systems**: The IXFX420N10T-VB is suitable for solar inverters and wind power generation systems, helping to achieve efficient power conversion at high power output, improving the overall efficiency and reliability of the system.
4. **Uninterruptible power supply (UPS)**: In UPS systems, the device is able to handle high currents, ensuring stable power supply to the load during power outages, preventing data loss and equipment damage.
5. **Industrial Automation**: IXFX420N10T-VB can also be used in high-power switches and driver modules in various industrial equipment and automation systems, providing strong current support and efficient power management capabilities to adapt to rapidly changing load requirements.
With its excellent performance, IXFX420N10T-VB is an ideal choice for a variety of high-performance power management applications, which can significantly improve system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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