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IXFX360N10T-VB Product details
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1. IXFX360N10T-VB MOSFET Product Introduction
IXFX360N10T-VB is a high-performance single N-channel power MOSFET packaged in TO247 with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. The device is designed with advanced Trench technology to provide extremely low on-resistance (RDS(ON)). When VGS=10V, the on-resistance is only 2mΩ and the maximum drain current can reach 320A. This makes the IXFX360N10T-VB very suitable for high-power, high-efficiency switching applications, which can significantly reduce heat generation and improve overall system efficiency.
IXFX360N10T-VB is a high-performance single N-channel power MOSFET packaged in TO247 with a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. The device is designed with advanced Trench technology to provide extremely low on-resistance (RDS(ON)). When VGS=10V, the on-resistance is only 2mΩ and the maximum drain current can reach 320A. This makes the IXFX360N10T-VB very suitable for high-power, high-efficiency switching applications, which can significantly reduce heat generation and improve overall system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFX360N10T-VB detailed parameter description
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 320A
- **Technology**: Trench
- **Power consumption capability**: High-efficiency switching applications
- **Operating frequency**: Suitable for high-frequency switching circuits
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
- **Maximum drain current (ID)**: 320A
- **Technology**: Trench
- **Power consumption capability**: High-efficiency switching applications
- **Operating frequency**: Suitable for high-frequency switching circuits
Domain and module applications：
3. Application fields and modules
IXFX360N10T-VB MOSFET is widely used in many fields and modules due to its excellent performance, especially in the following application scenarios:
1. **Power converter**:
In AC-DC and DC-DC power converters, IXFX360N10T-VB can achieve efficient power conversion and reduce switching losses, and is suitable for power management of server power, industrial power and consumer electronics.
2. **Electric vehicles and charging piles**:
Due to its high current carrying capacity and low on-resistance, this MOSFET is very suitable for use in the power system and fast charging piles of electric vehicles, which can improve charging efficiency and power output.
3. **Data center and server**:
In the power module of the data center, IXFX360N10T-VB can provide stable power supply, reduce power consumption and improve overall performance, supporting efficient data processing and storage needs.
4. **Renewable energy systems**:
This MOSFET can effectively manage high currents in solar inverters and wind converters, optimize energy conversion and utilization, and improve the overall efficiency of renewable energy systems.
5. **Industrial automation equipment**:
In the field of industrial automation, IXFX360N10T-VB can be used in motor drive and control systems to support high load management and improve the response speed and operating efficiency of equipment.
IXFX360N10T-VB MOSFET is widely used in many fields and modules due to its excellent performance, especially in the following application scenarios:
1. **Power converter**:
In AC-DC and DC-DC power converters, IXFX360N10T-VB can achieve efficient power conversion and reduce switching losses, and is suitable for power management of server power, industrial power and consumer electronics.
2. **Electric vehicles and charging piles**:
Due to its high current carrying capacity and low on-resistance, this MOSFET is very suitable for use in the power system and fast charging piles of electric vehicles, which can improve charging efficiency and power output.
3. **Data center and server**:
In the power module of the data center, IXFX360N10T-VB can provide stable power supply, reduce power consumption and improve overall performance, supporting efficient data processing and storage needs.
4. **Renewable energy systems**:
This MOSFET can effectively manage high currents in solar inverters and wind converters, optimize energy conversion and utilization, and improve the overall efficiency of renewable energy systems.
5. **Industrial automation equipment**:
In the field of industrial automation, IXFX360N10T-VB can be used in motor drive and control systems to support high load management and improve the response speed and operating efficiency of equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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