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IXFX34N80-VB Product details
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1. IXFX34N80-VB Product Introduction
IXFX34N80-VB is a high-voltage single N-channel power MOSFET in TO247 package, designed for high voltage applications. Its drain-source voltage (VDS) is as high as 800V, enabling it to handle extreme voltage conditions. The device has a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 220mΩ at a gate voltage of 10V, and supports a maximum drain current (ID) of 20A. IXFX34N80-VB uses advanced super junction (SJ) multi-layer epitaxial technology to ensure stability and high efficiency under high voltage and high temperature conditions, making it ideal for power conversion and high voltage drive applications.
IXFX34N80-VB is a high-voltage single N-channel power MOSFET in TO247 package, designed for high voltage applications. Its drain-source voltage (VDS) is as high as 800V, enabling it to handle extreme voltage conditions. The device has a threshold voltage (Vth) of 3.5V, an on-resistance (RDS(ON)) of 220mΩ at a gate voltage of 10V, and supports a maximum drain current (ID) of 20A. IXFX34N80-VB uses advanced super junction (SJ) multi-layer epitaxial technology to ensure stability and high efficiency under high voltage and high temperature conditions, making it ideal for power conversion and high voltage drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFX34N80-VB parameter description
- **Package type**: TO247
- **Type**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 220mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multi-layer epitaxial (Multi-EPI) technology
- **Package type**: TO247
- **Type**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 220mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Super junction (SJ) multi-layer epitaxial (Multi-EPI) technology
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power conversion**: IXFX34N80-VB is very suitable for high-voltage switching power supplies and DC-DC converters. Its high voltage withstand capability enables it to handle input voltages up to 800V while providing low conduction losses, greatly improving power conversion efficiency and making it suitable for industrial and commercial applications.
2. **Electric vehicle charging system**: In electric vehicle charging solutions, the high voltage carrying capacity of this MOSFET can support fast charger design and ensure safety and stability under high current. It can effectively reduce energy loss and increase charging speed during the charging process.
3. **Photovoltaic inverter**: In photovoltaic power generation systems, IXFX34N80-VB can be used in photovoltaic inverters to convert DC power into AC power and adapt to high voltage environments. Its high efficiency and stability ensure reliable operation under different weather conditions and help improve the overall efficiency of photovoltaic systems.
4. **Industrial Motor Drive**: In various industrial equipment and motor control systems, this MOSFET can be used to drive high-voltage motors, especially in applications that require high efficiency and high power, such as **Variable Frequency Drive** (VFD). Its excellent conductivity can meet the current and power requirements of industrial equipment.
In short, the IXFX34N80-VB is a MOSFET suitable for a variety of high-voltage, high-efficiency power management and conversion applications, and is widely used in power supplies, electric vehicles, photovoltaic power generation, and industrial drives.
1. **High-voltage power conversion**: IXFX34N80-VB is very suitable for high-voltage switching power supplies and DC-DC converters. Its high voltage withstand capability enables it to handle input voltages up to 800V while providing low conduction losses, greatly improving power conversion efficiency and making it suitable for industrial and commercial applications.
2. **Electric vehicle charging system**: In electric vehicle charging solutions, the high voltage carrying capacity of this MOSFET can support fast charger design and ensure safety and stability under high current. It can effectively reduce energy loss and increase charging speed during the charging process.
3. **Photovoltaic inverter**: In photovoltaic power generation systems, IXFX34N80-VB can be used in photovoltaic inverters to convert DC power into AC power and adapt to high voltage environments. Its high efficiency and stability ensure reliable operation under different weather conditions and help improve the overall efficiency of photovoltaic systems.
4. **Industrial Motor Drive**: In various industrial equipment and motor control systems, this MOSFET can be used to drive high-voltage motors, especially in applications that require high efficiency and high power, such as **Variable Frequency Drive** (VFD). Its excellent conductivity can meet the current and power requirements of industrial equipment.
In short, the IXFX34N80-VB is a MOSFET suitable for a variety of high-voltage, high-efficiency power management and conversion applications, and is widely used in power supplies, electric vehicles, photovoltaic power generation, and industrial drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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