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IXFX32N90P-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IXFX32N90P-VB is a high-voltage N-channel MOSFET in TO247 package, using advanced SJ (super junction) and multi-layer EPI technology. This MOSFET has a drain-source breakdown voltage (VDS) of 900V, which is very suitable for high-voltage applications. Its rated current is 20A and its on-resistance is 205mΩ@VGS=10V, ensuring superior performance in high-power applications. IXFX32N90P-VB performs well in high-voltage and high-efficiency power conversion and switching circuits, and is widely used in a variety of power management systems.
IXFX32N90P-VB is a high-voltage N-channel MOSFET in TO247 package, using advanced SJ (super junction) and multi-layer EPI technology. This MOSFET has a drain-source breakdown voltage (VDS) of 900V, which is very suitable for high-voltage applications. Its rated current is 20A and its on-resistance is 205mΩ@VGS=10V, ensuring superior performance in high-power applications. IXFX32N90P-VB performs well in high-voltage and high-efficiency power conversion and switching circuits, and is widely used in a variety of power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | 205mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 205mΩ @ VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 205mΩ @ VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application areas and module examples:
1. **Power converter**: IXFX32N90P-VB is ideal for high-voltage power converters. These converters provide efficient power transmission and management when high-voltage AC power needs to be converted to low-voltage DC power, and are suitable for industrial power supplies and power equipment.
2. **Variable frequency drive**: In the inverter, this MOSFET is capable of handling high voltages of 900V and is suitable for applications that drive motors. Its low on-resistance characteristics help improve energy efficiency, reduce heat loss, and improve overall system performance.
3. **Photovoltaic system inverter**: In photovoltaic (PV) systems, IXFX32N90P-VB is widely used in inverter modules. This MOSFET can operate stably at high voltages, ensuring efficient solar power conversion and maximizing energy utilization.
4. **Switching Power Supply (SMPS)**: Due to its high withstand voltage and low on-resistance, this MOSFET is also used in various switching power supply designs, such as computer power supplies and consumer electronics, to provide efficient power conversion and optimize system performance.
IXFX32N90P-VB has become a preferred component for efficient power management solutions in multiple fields due to its excellent performance and reliability.
1. **Power converter**: IXFX32N90P-VB is ideal for high-voltage power converters. These converters provide efficient power transmission and management when high-voltage AC power needs to be converted to low-voltage DC power, and are suitable for industrial power supplies and power equipment.
2. **Variable frequency drive**: In the inverter, this MOSFET is capable of handling high voltages of 900V and is suitable for applications that drive motors. Its low on-resistance characteristics help improve energy efficiency, reduce heat loss, and improve overall system performance.
3. **Photovoltaic system inverter**: In photovoltaic (PV) systems, IXFX32N90P-VB is widely used in inverter modules. This MOSFET can operate stably at high voltages, ensuring efficient solar power conversion and maximizing energy utilization.
4. **Switching Power Supply (SMPS)**: Due to its high withstand voltage and low on-resistance, this MOSFET is also used in various switching power supply designs, such as computer power supplies and consumer electronics, to provide efficient power conversion and optimize system performance.
IXFX32N90P-VB has become a preferred component for efficient power management solutions in multiple fields due to its excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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