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IXFX32N80Q3-VB Product details
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IXFX32N80Q3-VB Product Introduction
The IXFX32N80Q3-VB is a high-performance single N-channel MOSFET in a TO247 package. The device has a breakdown voltage (VDS) of 800V, can operate at a gate voltage (VGS) of ±30V, and has a threshold voltage (Vth) of 3.5V. At VGS = 10V, its on-resistance (RDS(ON)) is 220mΩ and can carry a rated current of up to 20A. The IXFX32N80Q3-VB uses Super Junction multi-layer EPI technology and is designed for high-voltage applications, which can improve system efficiency while reducing switching losses.
The IXFX32N80Q3-VB is a high-performance single N-channel MOSFET in a TO247 package. The device has a breakdown voltage (VDS) of 800V, can operate at a gate voltage (VGS) of ±30V, and has a threshold voltage (Vth) of 3.5V. At VGS = 10V, its on-resistance (RDS(ON)) is 220mΩ and can carry a rated current of up to 20A. The IXFX32N80Q3-VB uses Super Junction multi-layer EPI technology and is designed for high-voltage applications, which can improve system efficiency while reducing switching losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
| Parameter name| Value| Unit|
|------------------|--------------------|------|
| **Package type** | TO247 | - |
| **Channel type** | N-Channel | - |
| **Breakdown voltage (VDS)** | 800 | V |
| **Gate voltage (VGS)** | ±30 | V |
| **Threshold voltage (Vth)** | 3.5 | V |
| **On-resistance (RDS(ON))** | 220mΩ @ VGS=10V | mΩ |
| **Rated current (ID)** | 20 | A |
| **Technology** | SJ_Multi-EPI | - |
| Parameter name| Value| Unit|
|------------------|--------------------|------|
| **Package type** | TO247 | - |
| **Channel type** | N-Channel | - |
| **Breakdown voltage (VDS)** | 800 | V |
| **Gate voltage (VGS)** | ±30 | V |
| **Threshold voltage (Vth)** | 3.5 | V |
| **On-resistance (RDS(ON))** | 220mΩ @ VGS=10V | mΩ |
| **Rated current (ID)** | 20 | A |
| **Technology** | SJ_Multi-EPI | - |
Domain and module applications：
Application fields and module examples
1. **High-voltage power supply module**:
IXFX32N80Q3-VB is very suitable for high-voltage power supply design, such as switching power supplies and DC-DC converters. Its high breakdown voltage and low switching loss characteristics enable it to operate efficiently in strict electrical environments, ensuring the stability and reliability of the power supply system.
2. **Electric vehicle charging system**:
In the charging system of electric vehicles, this MOSFET can be used as a key switching element to handle the conversion requirements of high voltage and high current. Its high efficiency can increase charging speed, optimize energy management, and adapt to the market demand for fast charging.
3. **Solar inverter**:
IXFX32N80Q3-VB is suitable for solar inverters and can operate stably under high voltage conditions. Its excellent switching performance can improve the energy conversion efficiency of the system and provide a reliable solution for photovoltaic applications.
4. **Industrial Equipment and Motor Control**:
This MOSFET can also be used in motor drive and control systems in various industrial equipment, supporting efficient drive of high-voltage motors. In various automation equipment, the high power handling capability of the IXFX32N80Q3-VB can ensure the normal operation and reliability of the system.
1. **High-voltage power supply module**:
IXFX32N80Q3-VB is very suitable for high-voltage power supply design, such as switching power supplies and DC-DC converters. Its high breakdown voltage and low switching loss characteristics enable it to operate efficiently in strict electrical environments, ensuring the stability and reliability of the power supply system.
2. **Electric vehicle charging system**:
In the charging system of electric vehicles, this MOSFET can be used as a key switching element to handle the conversion requirements of high voltage and high current. Its high efficiency can increase charging speed, optimize energy management, and adapt to the market demand for fast charging.
3. **Solar inverter**:
IXFX32N80Q3-VB is suitable for solar inverters and can operate stably under high voltage conditions. Its excellent switching performance can improve the energy conversion efficiency of the system and provide a reliable solution for photovoltaic applications.
4. **Industrial Equipment and Motor Control**:
This MOSFET can also be used in motor drive and control systems in various industrial equipment, supporting efficient drive of high-voltage motors. In various automation equipment, the high power handling capability of the IXFX32N80Q3-VB can ensure the normal operation and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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