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IXFX32N80P-VB Product details
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Product Introduction
IXFX32N80P-VB is a high-voltage N-channel power MOSFET in TO247 package, designed for high-voltage and high-efficiency applications. The device has a drain-source voltage (VDS) of up to 800V and a gate-source voltage (VGS) of ±30V, suitable for handling demanding power conversion needs. Its on-resistance (RDS(ON)) is 220mΩ (at VGS=10V) and the maximum drain current (ID) is 20A. IXFX32N80P-VB uses SJ_Multi-EPI technology to ensure excellent electrical performance and thermal management capabilities, enabling it to perform well in high-voltage applications.
IXFX32N80P-VB is a high-voltage N-channel power MOSFET in TO247 package, designed for high-voltage and high-efficiency applications. The device has a drain-source voltage (VDS) of up to 800V and a gate-source voltage (VGS) of ±30V, suitable for handling demanding power conversion needs. Its on-resistance (RDS(ON)) is 220mΩ (at VGS=10V) and the maximum drain current (ID) is 20A. IXFX32N80P-VB uses SJ_Multi-EPI technology to ensure excellent electrical performance and thermal management capabilities, enabling it to perform well in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 220mΩ @ VGS=10V
7. **Drain current (ID)**: 20A
8. **Technology type**: Super Junction SJ_Multi-EPI technology
9. **Switching speed**: Suitable for high-frequency applications, capable of fast switching
10. **Power consumption**: Has good heat dissipation performance, suitable for high power density design
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 800V
4. **Gate-source voltage (VGS)**: ±30V
5. **Threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 220mΩ @ VGS=10V
7. **Drain current (ID)**: 20A
8. **Technology type**: Super Junction SJ_Multi-EPI technology
9. **Switching speed**: Suitable for high-frequency applications, capable of fast switching
10. **Power consumption**: Has good heat dissipation performance, suitable for high power density design
Domain and module applications：
Applications and modules
1. **Power converter**: IXFX32N80P-VB is very effective in high-voltage power converters, enabling efficient DC-DC conversion and ensuring high energy transmission. It is widely used in industrial power supplies and high-voltage power supply systems.
2. **Photovoltaic inverter**: Due to its high-voltage withstand capability, this MOSFET is an important component of solar photovoltaic inverters, which can efficiently convert the DC power generated by photovoltaic panels into AC power and maximize energy utilization efficiency.
3. **Switching power supply (SMPS)**: In switching power supplies, this device can be used for high-voltage and high-current power conversion, reducing energy loss and improving overall system efficiency. It is suitable for power modules for servers and communication equipment.
4. **Uninterruptible power supply (UPS)**: The high voltage withstand and good thermal management characteristics of IXFX32N80P-VB enable it to perform well in uninterruptible power supply systems, providing stable power support for key equipment.
5. **Motor drive control**: In high-voltage motor drive systems, this MOSFET can quickly respond and control the operating status of the motor, suitable for various industrial automation applications such as robotic arms and conveyor systems.
These applications demonstrate the wide applicability of the IXFX32N80P-VB in high-voltage power electronic equipment, especially in power conversion applications that require high efficiency and high reliability.
1. **Power converter**: IXFX32N80P-VB is very effective in high-voltage power converters, enabling efficient DC-DC conversion and ensuring high energy transmission. It is widely used in industrial power supplies and high-voltage power supply systems.
2. **Photovoltaic inverter**: Due to its high-voltage withstand capability, this MOSFET is an important component of solar photovoltaic inverters, which can efficiently convert the DC power generated by photovoltaic panels into AC power and maximize energy utilization efficiency.
3. **Switching power supply (SMPS)**: In switching power supplies, this device can be used for high-voltage and high-current power conversion, reducing energy loss and improving overall system efficiency. It is suitable for power modules for servers and communication equipment.
4. **Uninterruptible power supply (UPS)**: The high voltage withstand and good thermal management characteristics of IXFX32N80P-VB enable it to perform well in uninterruptible power supply systems, providing stable power support for key equipment.
5. **Motor drive control**: In high-voltage motor drive systems, this MOSFET can quickly respond and control the operating status of the motor, suitable for various industrial automation applications such as robotic arms and conveyor systems.
These applications demonstrate the wide applicability of the IXFX32N80P-VB in high-voltage power electronic equipment, especially in power conversion applications that require high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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