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IXFX32N50-VB Product details
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1. Product Introduction:
IXFX32N50-VB is a high voltage, single N-channel power MOSFET in TO247 package with a drain-source voltage (VDS) of up to 500V and a maximum continuous drain current (ID) of 40A. This MOSFET adopts multi-EPI (SJ_Multi-EPI) technology to optimize its performance and reduce the on-resistance (RDS(ON)=80mΩ@VGS=10V), which is suitable for high-efficiency power management and power conversion applications. IXFX32N50-VB is designed to work in harsh environments and has excellent voltage resistance and reliability.
IXFX32N50-VB is a high voltage, single N-channel power MOSFET in TO247 package with a drain-source voltage (VDS) of up to 500V and a maximum continuous drain current (ID) of 40A. This MOSFET adopts multi-EPI (SJ_Multi-EPI) technology to optimize its performance and reduce the on-resistance (RDS(ON)=80mΩ@VGS=10V), which is suitable for high-efficiency power management and power conversion applications. IXFX32N50-VB is designed to work in harsh environments and has excellent voltage resistance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Maximum pulsed drain current (ID, Pulse)**: Higher than 40A, depending on heat dissipation conditions
- **Technology**: Multi-EPI (SJ_Multi-EPI) technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: A certain power can be achieved under good heat dissipation conditions
- **Switching speed**: Suitable for high-frequency applications
- **Package type**: TO247
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 500V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Continuous drain current (ID)**: 40A
- **Maximum pulsed drain current (ID, Pulse)**: Higher than 40A, depending on heat dissipation conditions
- **Technology**: Multi-EPI (SJ_Multi-EPI) technology
- **Operating temperature range**: -55°C to 150°C
- **Power dissipation**: A certain power can be achieved under good heat dissipation conditions
- **Switching speed**: Suitable for high-frequency applications
Domain and module applications：
3. Application fields and module examples:
IXFX32N50-VB is suitable for a variety of high voltage and high power applications. Here are some specific application fields:
- **Switching Power Supply (SMPS)**: In high voltage switching power supplies and DC-DC converters, the high voltage and high current capabilities of IXFX32N50-VB can effectively improve the efficiency and stability of the power supply and reduce power loss.
- **Industrial Motor Drive**: Suitable for industrial motor control and automation equipment, IXFX32N50-VB provides reliable power regulation to ensure that the motor operates efficiently under various working conditions and can withstand high voltage and high current.
- **Renewable Energy Applications**: In solar inverters and wind power generation systems, this MOSFET can be used for energy conversion and control, supporting efficient energy management and transmission, and helping to achieve higher power generation efficiency.
- **High Voltage Power Module**: In power modules that require high voltage and high power, such as medical equipment, communication equipment, etc., the IXFX32N50-VB provides reliable performance to ensure stable operation of the equipment in harsh environments.
With its excellent electrical characteristics and reliability, the IXFX32N50-VB is an ideal choice for high-performance power management and power control applications.
IXFX32N50-VB is suitable for a variety of high voltage and high power applications. Here are some specific application fields:
- **Switching Power Supply (SMPS)**: In high voltage switching power supplies and DC-DC converters, the high voltage and high current capabilities of IXFX32N50-VB can effectively improve the efficiency and stability of the power supply and reduce power loss.
- **Industrial Motor Drive**: Suitable for industrial motor control and automation equipment, IXFX32N50-VB provides reliable power regulation to ensure that the motor operates efficiently under various working conditions and can withstand high voltage and high current.
- **Renewable Energy Applications**: In solar inverters and wind power generation systems, this MOSFET can be used for energy conversion and control, supporting efficient energy management and transmission, and helping to achieve higher power generation efficiency.
- **High Voltage Power Module**: In power modules that require high voltage and high power, such as medical equipment, communication equipment, etc., the IXFX32N50-VB provides reliable performance to ensure stable operation of the equipment in harsh environments.
With its excellent electrical characteristics and reliability, the IXFX32N50-VB is an ideal choice for high-performance power management and power control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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