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IXFX32N50Q-VB Product details
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IXFX32N50Q-VB MOSFET Product Introduction:
IXFX32N50Q-VB is a high-voltage N-channel power MOSFET manufactured using advanced SJ_Multi-EPI technology and packaged in a TO247 housing. The device has a drain-source withstand voltage (VDS) of 500V and performs well in high current and high voltage applications. Its on-resistance (RDS(ON)) is 80mΩ (at VGS = 10V), and it can carry up to 40A of current, making it suitable for a variety of high-power electronic devices. The gate threshold voltage (Vth) of this MOSFET is 3.8V, ensuring stability and reliability under a variety of drive voltages.
IXFX32N50Q-VB is a high-voltage N-channel power MOSFET manufactured using advanced SJ_Multi-EPI technology and packaged in a TO247 housing. The device has a drain-source withstand voltage (VDS) of 500V and performs well in high current and high voltage applications. Its on-resistance (RDS(ON)) is 80mΩ (at VGS = 10V), and it can carry up to 40A of current, making it suitable for a variety of high-power electronic devices. The gate threshold voltage (Vth) of this MOSFET is 3.8V, ensuring stability and reliability under a variety of drive voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
1. **Package type**: TO247
2. **Configuration**: Single-N-Channel
3. **Drain-source withstand voltage (VDS)**: 500V
4. **Gate-source withstand voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
9. **Operating junction temperature range**: -55°C to +175°C
10. **Switching speed**: Suitable for high-frequency applications
1. **Package type**: TO247
2. **Configuration**: Single-N-Channel
3. **Drain-source withstand voltage (VDS)**: 500V
4. **Gate-source withstand voltage (VGS)**: ±30V
5. **Gate threshold voltage (Vth)**: 3.8V
6. **On-resistance (RDS(ON))**: 80mΩ @ VGS = 10V
7. **Drain current (ID)**: 40A
8. **Technology type**: SJ_Multi-EPI
9. **Operating junction temperature range**: -55°C to +175°C
10. **Switching speed**: Suitable for high-frequency applications
Domain and module applications：
Applicable fields and application modules:
- **Power converter**: IXFX32N50Q-VB is widely used in switching power supplies (SMPS) and DC-DC converters. Its high voltage and low on-resistance characteristics make it excellent in high power conversion, which helps to improve energy efficiency and reduce heat loss.
- **Industrial equipment**: In industrial automation and heavy-duty equipment, this MOSFET can provide stable power control and is suitable for applications such as motor drives and actuators to ensure efficient operation of the system.
- **Uninterruptible power supply (UPS) system**: This device can be used as a key switching element in the UPS system, supporting high current and high voltage energy management to ensure power supply stability in the event of a power outage.
- **Electric vehicles (EV) and charging systems**: IXFX32N50Q-VB is suitable for power management modules and charging equipment for electric vehicles, capable of handling high voltage and high current, improving charging efficiency and safety.
- **Solar inverter**: In solar power generation systems, this MOSFET can be used for inverter power conversion, helping to achieve efficient DC to AC conversion and promote the use of renewable energy.
In short, IXFX32N50Q-VB has become an indispensable component in high-voltage power electronic equipment with its excellent performance and wide applicability.
- **Power converter**: IXFX32N50Q-VB is widely used in switching power supplies (SMPS) and DC-DC converters. Its high voltage and low on-resistance characteristics make it excellent in high power conversion, which helps to improve energy efficiency and reduce heat loss.
- **Industrial equipment**: In industrial automation and heavy-duty equipment, this MOSFET can provide stable power control and is suitable for applications such as motor drives and actuators to ensure efficient operation of the system.
- **Uninterruptible power supply (UPS) system**: This device can be used as a key switching element in the UPS system, supporting high current and high voltage energy management to ensure power supply stability in the event of a power outage.
- **Electric vehicles (EV) and charging systems**: IXFX32N50Q-VB is suitable for power management modules and charging equipment for electric vehicles, capable of handling high voltage and high current, improving charging efficiency and safety.
- **Solar inverter**: In solar power generation systems, this MOSFET can be used for inverter power conversion, helping to achieve efficient DC to AC conversion and promote the use of renewable energy.
In short, IXFX32N50Q-VB has become an indispensable component in high-voltage power electronic equipment with its excellent performance and wide applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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