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IXFX27N80Q-VB Product details
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Product Introduction:
IXFX27N80Q-VB is a high-voltage unipolar N-channel MOSFET in TO247 package, designed for high voltage applications. It has a rated drain-source voltage of up to 800V, can withstand extreme voltage conditions, and has a maximum drain current of 20A. The device uses SJ_Multi-EPI technology, has good switching characteristics and low on-resistance (220mΩ@VGS=10V), making it excellent in high-efficiency power management and conversion applications, and is suitable for various industrial and power electronics fields.
IXFX27N80Q-VB is a high-voltage unipolar N-channel MOSFET in TO247 package, designed for high voltage applications. It has a rated drain-source voltage of up to 800V, can withstand extreme voltage conditions, and has a maximum drain current of 20A. The device uses SJ_Multi-EPI technology, has good switching characteristics and low on-resistance (220mΩ@VGS=10V), making it excellent in high-efficiency power management and conversion applications, and is suitable for various industrial and power electronics fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | 220mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description:
- **Package type**: TO247
- **Channel configuration**: Single N channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 220mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Operating temperature range**: Typically -55°C to 175°C
- **Power consumption**: High power handling capability, suitable for high voltage applications
- **Breakdown voltage**: 800V
- **Drain current saturation region current**: 20A (continuous), with good thermal performance
- **Package type**: TO247
- **Channel configuration**: Single N channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 220mΩ @ VGS=10V
- **Drain current (ID)**: 20A
- **Technology type**: SJ_Multi-EPI
- **Operating temperature range**: Typically -55°C to 175°C
- **Power consumption**: High power handling capability, suitable for high voltage applications
- **Breakdown voltage**: 800V
- **Drain current saturation region current**: 20A (continuous), with good thermal performance
Domain and module applications：
Application areas and module examples:
1. **High-voltage power supply system**: IXFX27N80Q-VB is widely used in high-voltage power converters. It can effectively handle high voltage and high current. It is suitable for industrial power supplies and power generation equipment to ensure efficient energy conversion.
2. **Power electronic equipment**: This MOSFET can be used in power electronic converters such as inverters and rectifiers, especially in renewable energy systems (such as solar and wind energy), to help achieve efficient power conversion and management.
3. **Electric vehicle charging station**: IXFX27N80Q-VB is suitable for use in high-power conversion modules in electric vehicle charging stations, providing reliable high-voltage switching capabilities to support fast charging and efficient energy transmission.
4. **Uninterruptible power supply (UPS)**: In UPS systems, the device can handle high voltage and high current to ensure stable power supply to the load during power outages, preventing data loss or equipment damage.
5. **Industrial Automation and Control**: The IXFX27N80Q-VB can also be used in high-voltage motor drive and control applications in industrial automation systems, providing the necessary switching capabilities to meet the needs of a variety of complex loads.
With its high-voltage performance and low on-resistance, the IXFX27N80Q-VB has become a key component in a variety of high-efficiency power solutions and is widely used in the field of high-voltage power electronics.
1. **High-voltage power supply system**: IXFX27N80Q-VB is widely used in high-voltage power converters. It can effectively handle high voltage and high current. It is suitable for industrial power supplies and power generation equipment to ensure efficient energy conversion.
2. **Power electronic equipment**: This MOSFET can be used in power electronic converters such as inverters and rectifiers, especially in renewable energy systems (such as solar and wind energy), to help achieve efficient power conversion and management.
3. **Electric vehicle charging station**: IXFX27N80Q-VB is suitable for use in high-power conversion modules in electric vehicle charging stations, providing reliable high-voltage switching capabilities to support fast charging and efficient energy transmission.
4. **Uninterruptible power supply (UPS)**: In UPS systems, the device can handle high voltage and high current to ensure stable power supply to the load during power outages, preventing data loss or equipment damage.
5. **Industrial Automation and Control**: The IXFX27N80Q-VB can also be used in high-voltage motor drive and control applications in industrial automation systems, providing the necessary switching capabilities to meet the needs of a variety of complex loads.
With its high-voltage performance and low on-resistance, the IXFX27N80Q-VB has become a key component in a variety of high-efficiency power solutions and is widely used in the field of high-voltage power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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