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IXFX26N90-VB Product details
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IXFX26N90-VB MOSFET Product Introduction
The IXFX26N90-VB is a high-voltage N-channel MOSFET in a TO247 package, designed to withstand drain-source voltages up to 900V, suitable for a variety of high-voltage applications. Its gate voltage is ±30V and its threshold voltage is 3.5V. At a gate drive of 10V, its on-resistance is 205mΩ and it can provide a drain current of up to 20A. The IXFX26N90-VB uses super junction multi-epitaxial (SJ_Multi-EPI) technology, which has good switching performance and low power consumption, making it very suitable for use in high-voltage applications.
The IXFX26N90-VB is a high-voltage N-channel MOSFET in a TO247 package, designed to withstand drain-source voltages up to 900V, suitable for a variety of high-voltage applications. Its gate voltage is ±30V and its threshold voltage is 3.5V. At a gate drive of 10V, its on-resistance is 205mΩ and it can provide a drain current of up to 20A. The IXFX26N90-VB uses super junction multi-epitaxial (SJ_Multi-EPI) technology, which has good switching performance and low power consumption, making it very suitable for use in high-voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | 205mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IXFX26N90-VB MOSFET detailed parameter description
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 900V
- **VGS** (gate drive voltage): ±30V
- **Vth** (threshold voltage): 3.5V
- **RDS(ON)** (on-resistance): 205mΩ @ VGS=10V
- **ID** (drain current): 20A
- **Technology**: Superjunction (SJ) Multi-EPI
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 900V
- **VGS** (gate drive voltage): ±30V
- **Vth** (threshold voltage): 3.5V
- **RDS(ON)** (on-resistance): 205mΩ @ VGS=10V
- **ID** (drain current): 20A
- **Technology**: Superjunction (SJ) Multi-EPI
Domain and module applications：
Applications and modules
1. **High-voltage power converters**: The IXFX26N90-VB can be widely used in high-voltage power converters, especially in applications that require handling voltages above 900V, such as power modules for industrial equipment and high-voltage switching power supplies, which have extremely high requirements for MOSFET withstand voltage and efficiency.
2. **Electric vehicle chargers**: In fast chargers for electric vehicles, the IXFX26N90-VB can efficiently manage high voltages and high currents, support fast charging, while maintaining high energy efficiency, and ensure the safety and stability of the charging process.
3. **Renewable energy systems**: In photovoltaic inverters and wind power generation systems, the high withstand voltage characteristics of the IXFX26N90-VB make it an ideal choice for high-efficiency power management, and can provide reliable performance in a variety of harsh environmental conditions.
4. **Motor control**: This MOSFET performs well in high-voltage motor control systems, can handle high currents and high voltages, and is very suitable for motor drive modules in industrial automation and robotics systems.
5. **Uninterruptible Power Supply (UPS)**: IXFX26N90-VB also has important applications in UPS systems, providing efficient power conversion and ensuring stable power support for the load during power outages or power fluctuations.
1. **High-voltage power converters**: The IXFX26N90-VB can be widely used in high-voltage power converters, especially in applications that require handling voltages above 900V, such as power modules for industrial equipment and high-voltage switching power supplies, which have extremely high requirements for MOSFET withstand voltage and efficiency.
2. **Electric vehicle chargers**: In fast chargers for electric vehicles, the IXFX26N90-VB can efficiently manage high voltages and high currents, support fast charging, while maintaining high energy efficiency, and ensure the safety and stability of the charging process.
3. **Renewable energy systems**: In photovoltaic inverters and wind power generation systems, the high withstand voltage characteristics of the IXFX26N90-VB make it an ideal choice for high-efficiency power management, and can provide reliable performance in a variety of harsh environmental conditions.
4. **Motor control**: This MOSFET performs well in high-voltage motor control systems, can handle high currents and high voltages, and is very suitable for motor drive modules in industrial automation and robotics systems.
5. **Uninterruptible Power Supply (UPS)**: IXFX26N90-VB also has important applications in UPS systems, providing efficient power conversion and ensuring stable power support for the load during power outages or power fluctuations.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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