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IXFX24N90Q-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IXFX24N90Q-VB is a high-voltage N-channel MOSFET in TO247 package, using advanced SJ (super junction) and multi-layer EPI technology. The device has a drain-source breakdown voltage (VDS) of 900V, making it suitable for high-voltage applications. The rated current is 20A and the on-resistance is 205mΩ@VGS=10V. This MOSFET can operate efficiently in high-power and high-voltage environments, and is widely used in power conversion and switching circuits, suitable for a variety of demanding applications.
IXFX24N90Q-VB is a high-voltage N-channel MOSFET in TO247 package, using advanced SJ (super junction) and multi-layer EPI technology. The device has a drain-source breakdown voltage (VDS) of 900V, making it suitable for high-voltage applications. The rated current is 20A and the on-resistance is 205mΩ@VGS=10V. This MOSFET can operate efficiently in high-power and high-voltage environments, and is widely used in power conversion and switching circuits, suitable for a variety of demanding applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | 205mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 205mΩ @ VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 205mΩ @ VGS=10V
- **Continuous drain current (ID)**: 20A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples:
1. **High-voltage power supply**: The IXFX24N90Q-VB's 900V breakdown voltage makes it ideal for high-voltage power modules. These modules are widely used in industrial power supplies and medical equipment, providing stable voltage output and operating efficiently in high-voltage environments.
2. **Inverter**: In inverter applications, this MOSFET is able to handle high voltage and high current, allowing it to provide stable power output when driving motors. Due to its low on-resistance and efficient switching capabilities, it can reduce energy losses and improve system efficiency.
3. **Photovoltaic inverter**: The IXFX24N90Q-VB is suitable for inverters in photovoltaic systems, capable of power conversion at high voltages, ensuring efficient energy management of the system when solar power is generated.
4. **Switching power supply (SMPS)**: In switching power supply designs, the high efficiency and voltage resistance of this MOSFET make it suitable for a variety of power modules, especially in applications that require high power density, such as server power supplies and power conversion systems.
Due to its high withstand voltage and low on-resistance, this MOSFET is the ideal choice for efficient energy management solutions in many fields.
1. **High-voltage power supply**: The IXFX24N90Q-VB's 900V breakdown voltage makes it ideal for high-voltage power modules. These modules are widely used in industrial power supplies and medical equipment, providing stable voltage output and operating efficiently in high-voltage environments.
2. **Inverter**: In inverter applications, this MOSFET is able to handle high voltage and high current, allowing it to provide stable power output when driving motors. Due to its low on-resistance and efficient switching capabilities, it can reduce energy losses and improve system efficiency.
3. **Photovoltaic inverter**: The IXFX24N90Q-VB is suitable for inverters in photovoltaic systems, capable of power conversion at high voltages, ensuring efficient energy management of the system when solar power is generated.
4. **Switching power supply (SMPS)**: In switching power supply designs, the high efficiency and voltage resistance of this MOSFET make it suitable for a variety of power modules, especially in applications that require high power density, such as server power supplies and power conversion systems.
Due to its high withstand voltage and low on-resistance, this MOSFET is the ideal choice for efficient energy management solutions in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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