IXFX200N10P-VB Product details
Product introduction:
The IXFX200N10P-VB is a high-performance N-channel power MOSFET in a TO247 package, designed for high current and high efficiency applications. It features a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V, as well as an on-resistance (RDS(ON)) of only 2mΩ, making it an excellent performer in low power and high efficiency applications. The maximum drain current (ID) is up to 320A, making it suitable for a variety of demanding power conversion applications. The device uses Trench technology to ensure excellent conduction performance and excellent thermal management characteristics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 320A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
1. **Package type**: TO247
2. **Channel configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 2mΩ @ VGS=10V
7. **Drain current (ID)**: 320A
8. **Technology type**: Trench technology
9. **Switching speed**: Fast switching capability, suitable for high-frequency applications
10. **Power consumption**: Excellent heat dissipation performance, suitable for high power density design
Domain and module applications:
1. **Electric vehicle charging system**: The high current carrying capacity and low on-resistance of the IXFX200N10P-VB make it very suitable for use in charging stations for electric vehicles. It can efficiently handle the high current generated during the charging process, ensuring a safe and fast charging experience.
2. **Power management**: In switching power supplies and uninterruptible power supply (UPS) systems, this MOSFET can achieve efficient power conversion, reduce energy loss, and improve overall system efficiency. It is suitable for applications that require high efficiency and high reliability.
3. **Motor drive control**: When used in motor drive systems, the IXFX200N10P-VB can achieve fast switching control to ensure stable operation of the motor under different load conditions. It is suitable for the drive and control of motors in industrial automation and robotics.
4. **Solar inverter**: In photovoltaic systems, this MOSFET has excellent high-frequency performance and is suitable for use in solar inverters to convert DC power into AC power and maximize energy efficiency.
5. **High Power Amplifier**: In RF and audio applications, the device can provide high current output, suitable for high power amplifiers, ensuring signal stability and efficient transmission.
These applications show that IXFX200N10P-VB has a wide range of applicability in modern power electronic equipment, especially in situations requiring high performance and high reliability.
Technical support:
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