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IXFX180N07-VB Product details
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IXFX180N07-VB MOSFET Product Introduction
The IXFX180N07-VB is a high-performance N-channel MOSFET in a TO247 package with excellent power handling capabilities. It has a rated drain-source voltage of 80V, a gate voltage of ±20V, and a threshold voltage of 3.5V. The device has an on-resistance of 4mΩ at a gate voltage of 4.5V and is reduced to 2.8mΩ at a gate voltage of 10V, with a maximum drain current of 215A. The IXFX180N07-VB uses Trench technology to achieve extremely high switching efficiency and low energy consumption, making it suitable for a variety of high-performance applications.
The IXFX180N07-VB is a high-performance N-channel MOSFET in a TO247 package with excellent power handling capabilities. It has a rated drain-source voltage of 80V, a gate voltage of ±20V, and a threshold voltage of 3.5V. The device has an on-resistance of 4mΩ at a gate voltage of 4.5V and is reduced to 2.8mΩ at a gate voltage of 10V, with a maximum drain current of 215A. The IXFX180N07-VB uses Trench technology to achieve extremely high switching efficiency and low energy consumption, making it suitable for a variety of high-performance applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 80V | 3.5V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IXFX180N07-VB MOSFET detailed parameter description
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 80V
- **VGS** (gate drive voltage): ±20V
- **Vth** (threshold voltage): 3.5V
- **RDS(ON)** (on-resistance):
- 4mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **ID** (drain current): 215A
- **Technology**: Trench
- **Package**: TO247
- **Configuration**: Single N-channel
- **VDS** (drain-source voltage): 80V
- **VGS** (gate drive voltage): ±20V
- **Vth** (threshold voltage): 3.5V
- **RDS(ON)** (on-resistance):
- 4mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **ID** (drain current): 215A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power management**: The IXFX180N07-VB performs well in switching power supply design, providing high-efficiency power conversion, and is particularly suitable for applications that require fast switching and high power density, such as power modules for servers and communication equipment.
2. **Electric vehicle (EV) drive system**: In the motor control and power conversion system of electric vehicles, this MOSFET is suitable for motor drive and charging control circuits with its low on-resistance and high current handling capability, which can improve the energy efficiency and response speed of the system.
3. **Industrial automation**: In industrial automation equipment, the IXFX180N07-VB is widely used in servo drives and robot control systems. With its high current capability and fast switching characteristics, it can effectively support high-precision and high-efficiency operations.
4. **Battery management system (BMS)**: The device also has important applications in battery management systems, capable of handling high currents and ensuring the stability and safety of the system during charging and discharging, especially for the management of lithium-ion batteries.
5. **LED driver power supply**: IXFX180N07-VB also plays a role in high-brightness LED driver power supply. With its fast switching characteristics and low loss, it can effectively improve the performance and efficiency of LED lighting systems.
1. **Power management**: The IXFX180N07-VB performs well in switching power supply design, providing high-efficiency power conversion, and is particularly suitable for applications that require fast switching and high power density, such as power modules for servers and communication equipment.
2. **Electric vehicle (EV) drive system**: In the motor control and power conversion system of electric vehicles, this MOSFET is suitable for motor drive and charging control circuits with its low on-resistance and high current handling capability, which can improve the energy efficiency and response speed of the system.
3. **Industrial automation**: In industrial automation equipment, the IXFX180N07-VB is widely used in servo drives and robot control systems. With its high current capability and fast switching characteristics, it can effectively support high-precision and high-efficiency operations.
4. **Battery management system (BMS)**: The device also has important applications in battery management systems, capable of handling high currents and ensuring the stability and safety of the system during charging and discharging, especially for the management of lithium-ion batteries.
5. **LED driver power supply**: IXFX180N07-VB also plays a role in high-brightness LED driver power supply. With its fast switching characteristics and low loss, it can effectively improve the performance and efficiency of LED lighting systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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