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IXFT140N10P-VB Product details
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1. IXFT140N10P-VB Product Introduction
IXFT140N10P-VB is a high-performance single N-channel power MOSFET designed with TO247 package, optimized for high current applications. Its drain-source voltage (VDS) can withstand up to 100V, suitable for a variety of power management and conversion occasions. The threshold voltage (Vth) of this MOSFET is 3V, and the on-resistance (RDS(ON)) is only 6mΩ at a gate voltage of 10V, which enables it to perform well under high current (ID) 150A operating conditions with extremely low conduction losses. Using advanced Trench technology, the IXFT140N10P-VB can operate stably in high-efficiency and high-temperature environments, making it an ideal choice for power supply and drive applications.
IXFT140N10P-VB is a high-performance single N-channel power MOSFET designed with TO247 package, optimized for high current applications. Its drain-source voltage (VDS) can withstand up to 100V, suitable for a variety of power management and conversion occasions. The threshold voltage (Vth) of this MOSFET is 3V, and the on-resistance (RDS(ON)) is only 6mΩ at a gate voltage of 10V, which enables it to perform well under high current (ID) 150A operating conditions with extremely low conduction losses. Using advanced Trench technology, the IXFT140N10P-VB can operate stably in high-efficiency and high-temperature environments, making it an ideal choice for power supply and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. IXFT140N10P-VB parameter description
- **Package type**: TO247
- **Type**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package type**: TO247
- **Type**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 10V
- **Drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
3. Application fields and module examples
1. **Power supply**: The low on-resistance and high current carrying capacity of IXFT140N10P-VB make it very suitable for **Switching Power Supply** and **DC-DC Converter**. In these applications, MOSFET can effectively reduce power consumption and improve energy conversion efficiency, thereby reducing the heat dissipation requirements of the system.
2. **Electric vehicle drive**: In the motor drive system of electric vehicles, this MOSFET can be used as a key component in the **motor controller**. Its high current capability and low conduction loss ensure the efficiency and response speed of the motor drive system under startup and high load conditions.
3. **High-efficiency charger**: IXFT140N10P-VB is also suitable for high-efficiency chargers, such as fast chargers and mobile device chargers. Its stable performance under different load conditions can meet various charging needs and provide fast and safe charging solutions.
4. **Industrial Automation**: In industrial automation equipment, this MOSFET can be used to drive high-power loads such as **servo motors** and **solenoid valves**. Its high withstand voltage and high current characteristics ensure reliable operation of the equipment under harsh conditions.
In short, the IXFT140N10P-VB is a powerful MOSFET suitable for a variety of high-efficiency power applications. It is widely used in power supplies, automotive and industrial fields to meet the needs of high-performance power management.
1. **Power supply**: The low on-resistance and high current carrying capacity of IXFT140N10P-VB make it very suitable for **Switching Power Supply** and **DC-DC Converter**. In these applications, MOSFET can effectively reduce power consumption and improve energy conversion efficiency, thereby reducing the heat dissipation requirements of the system.
2. **Electric vehicle drive**: In the motor drive system of electric vehicles, this MOSFET can be used as a key component in the **motor controller**. Its high current capability and low conduction loss ensure the efficiency and response speed of the motor drive system under startup and high load conditions.
3. **High-efficiency charger**: IXFT140N10P-VB is also suitable for high-efficiency chargers, such as fast chargers and mobile device chargers. Its stable performance under different load conditions can meet various charging needs and provide fast and safe charging solutions.
4. **Industrial Automation**: In industrial automation equipment, this MOSFET can be used to drive high-power loads such as **servo motors** and **solenoid valves**. Its high withstand voltage and high current characteristics ensure reliable operation of the equipment under harsh conditions.
In short, the IXFT140N10P-VB is a powerful MOSFET suitable for a variety of high-efficiency power applications. It is widely used in power supplies, automotive and industrial fields to meet the needs of high-performance power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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