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IXFR80N60P3-VB Product details
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1. Product Introduction:
IXFR80N60P3-VB is a high-performance N-channel MOSFET in TO247 package. It adopts advanced SJ (super junction) and multi-layer EPI technology to provide low on-resistance and high current handling capability. This MOSFET has a drain-source breakdown voltage (VDS) of 650V, making it suitable for high-voltage applications. The rated current is 47A and the on-resistance is 75mΩ@VGS=10V. This makes it excellent in power conversion and switching circuits that require high efficiency and low loss, especially suitable for high-voltage and high-power scenarios.
IXFR80N60P3-VB is a high-performance N-channel MOSFET in TO247 package. It adopts advanced SJ (super junction) and multi-layer EPI technology to provide low on-resistance and high current handling capability. This MOSFET has a drain-source breakdown voltage (VDS) of 650V, making it suitable for high-voltage applications. The rated current is 47A and the on-resistance is 75mΩ@VGS=10V. This makes it excellent in power conversion and switching circuits that require high efficiency and low loss, especially suitable for high-voltage and high-power scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | 75mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description:
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Continuous drain current (ID)**: 47A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source breakdown voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 75mΩ @ VGS=10V
- **Continuous drain current (ID)**: 47A
- **Technology**: Super junction (SJ) and multi-layer EPI
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Application fields and module examples:
1. **Electric vehicle (EV) charger**: The high withstand voltage characteristics of the IXFR80N60P3-VB make it ideal for use in high-power charger modules for electric vehicles. This application typically requires voltage levels of 650V or higher to convert power, and requires efficient power transmission and conversion capabilities to achieve fast charging.
2. **Photovoltaic inverter**: This MOSFET is ideal for inverter modules in photovoltaic (PV) systems, which typically operate under high voltage conditions and require components to withstand high voltages and provide high-efficiency power conversion. Super junction technology enables lower power consumption and higher reliability in such applications.
3. **Switching power supply (SMPS)**: The low on-resistance and high current handling capabilities of this device make it ideal for high-efficiency switching power supplies, especially where it is necessary to reduce heat generation and improve system efficiency, such as server power supplies, industrial power modules, etc.
4. **Uninterruptible Power Supply (UPS) System**: IXFR80N60P3-VB can also find wide applications in UPS systems. Such systems usually require high voltage and high-efficiency power management, and the high-speed switching capability of MOSFET ensures reliability and stability.
The characteristics of this product make it suitable for application scenarios that require high voltage, high current and high-efficiency conversion. At the same time, due to its robust technical process and high-voltage resistance, it performs well in power management modules in multiple fields.
1. **Electric vehicle (EV) charger**: The high withstand voltage characteristics of the IXFR80N60P3-VB make it ideal for use in high-power charger modules for electric vehicles. This application typically requires voltage levels of 650V or higher to convert power, and requires efficient power transmission and conversion capabilities to achieve fast charging.
2. **Photovoltaic inverter**: This MOSFET is ideal for inverter modules in photovoltaic (PV) systems, which typically operate under high voltage conditions and require components to withstand high voltages and provide high-efficiency power conversion. Super junction technology enables lower power consumption and higher reliability in such applications.
3. **Switching power supply (SMPS)**: The low on-resistance and high current handling capabilities of this device make it ideal for high-efficiency switching power supplies, especially where it is necessary to reduce heat generation and improve system efficiency, such as server power supplies, industrial power modules, etc.
4. **Uninterruptible Power Supply (UPS) System**: IXFR80N60P3-VB can also find wide applications in UPS systems. Such systems usually require high voltage and high-efficiency power management, and the high-speed switching capability of MOSFET ensures reliability and stability.
The characteristics of this product make it suitable for application scenarios that require high voltage, high current and high-efficiency conversion. At the same time, due to its robust technical process and high-voltage resistance, it performs well in power management modules in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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